High Magnetic Field Studies of Tunnelling Through X-Valley-Related Silicon Donor States in GaAs/AlAs Heterostructures

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概要

• 論文の詳細を見る

• Four resonances have been obserxzed in the ctrrrent-voltage characteristics of a GaAs/AJAssingle-barrier diode incorporating ;+ d-layer of' silicon donors in the barrier, High unagnetic fieldsapplied perpendictrlar to the plane of the barrier are trsed to exatnine the natttre of tlae resonantfeattrres ir'n the cvrrrent-voltage claaracteristics of tlae diode. Tlae diode has been rtuodelled, shoxving that the voltage positions and magnetic field dependence of the [oxver bias resor'xances areconsistent with ttrnne[Iing throtrgh strain-field split grotznd ststtes of silicon i?aapturities below theX-cozaduction band naiuaina?r of' AIAs.

• 社団法人日本物理学会の論文
• 1997-08-15

著者

• MIURA Noboru

  Institute for Solid State Physics,University of Tokyo

• Hill G

  Univ. Sheffield Sheffield Gbr

• Miura Noboru

  Instilute For Solid State Physics University Of Tokyo

• EAVES Laurence

  Department of Physics,University of Nottingham

• Eaves Laurence

  Department Of Physics University Of Nottingham

• Henini M

  School Of Physics And Astronomy University Of Nottingham

• Hayden Robin

  Institute for solid State Physics,University of Tokyo

• Itskevich Igor

  Insutitute of Solid State Physics,Russian Academy of Sciences

• Henini Mohamed

  Department of Physics,University of Nottingham

• Hill Geoff

  Engineering and Physical Sciences Reserch Council Central Facility for III-V Semiconductors,Departme

• Hayden Robin

  Institute For Solid State Physics University Of Tokyo

• Itskevich I

  Insutitute Of Solid State Physics Russian Academy Of Sciences

• Henini Mohamed

  Department of Physics, University of Nottingham, University Park, Nottingham, NG7 2RD, UK

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