MOCVD Growth of ZnS_xSe_<1-x> Epitaxial Layers Lattice-Matched to GaAs Using Alkyls of Zn, S and Se

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概要

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• ZnS_xSe_<1-x> epitaxial layers have been grown on GaAs (100) substrates by metalorganic chemical vapor deposition (MOCVD) using Zn-, S- and Se-alkyls. With this source combination, the premature reaction typically encountered in the conventional MOCVD of zinc chalcogenides using Zn-alkyls and H_2S or H_2Se can be eliminated. The composition of ZnS_xSe_<1-x> is easily controlled by the transport rates of S- and Se-alkyls. High crystalline quality of lattice matched samples is evident from the surface morphology and the line width of double crystal X-ray diffraction.

• 社団法人応用物理学会の論文
• 1985-11-20

著者

• Kukimoto H

  National Space Dev. Agency Of Japan Ibaraki Jpn

• Kukimoto H

  Imaging Science And Engineering Laboratory Tokyo Institute Of Technology:(present Address)toppan Pri

• Mitsuhashi H

  Materials And Devices Research Laboratories R & D Center Toshiba Corporation

• MITSUISHI Iwao

  Imaging Science and Engineering Laboratory, Tokyo Institute of Technology

• Kukimoto Hiroshi

  Imaging Science And Engineering Lab. Tokyo Institute Of Technology

• Mitsuishi I

  Imaging Science And Engineering Laboratory Tokyo Institute Of Technology

• MITSUHASHI Hiroshi

  Imaging Science and Engineering Laboratory, Tokyo Institute of Technology

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