Investigation of Deep Levels and Residual Impurities in Sublimation-Grown SiC Substrates

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概要

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• Deep levels and residual impurities in sublimation-grown n-type SiC substrates are investigated. Three electron trap centers at 0.26, 0.35 and 0.72 eV below the conduction band (CB) are observed in 4H-SiC for the first time by deep-level transient spectroscopy (DLTS). One electron trap center at 0.68 eV below the CB is also observed in n-type 6H-SiC. The trap concentration and capture cross section are estimated. The concentration of residual impurities V, Cr, Fe and Ti are found to be high. The origin of observed trap centers is discussed with respect to the residual impurities and available information.

• 社団法人応用物理学会の論文
• 1994-07-01

著者

• UDDIN Ashraf

  Materials and Devices Research Laboratories, R&D Center, Toshiba Corporation

• UEMOTO Tsutomu

  Materials and Devices Research Laboratories, R&D Center, Toshiba Corporation

• Uddin Ashraf

  Materials And Device Research Laboratories R&d Center Toshiba Corporation

• Uddin Ashraf

  Materials And Devices Research Laboratories R & D Center Toshiba Corporation

• Uemoto Tsutomu

  Materials And Device Research Laboratories R&d Center Toshiba Corporation

• Uemoto Tsutomu

  Materials And Devices Research Laboratories R & D Center Toshiba Corporation

• Mitsuhashi H

  Materials And Devices Research Laboratories R & D Center Toshiba Corporation

• MITSUHASHI Hiroshi

  Materials and Devices Research Laboratories, R & D Center, Toshiba Corporation

関連論文

• Trap Centers in Germanium-Implanted and in As-Grown 6H-SiC
• Observation of Deep Level in p-n Junction Diode of 6H:SiC
• Investigation of Deep Levels and Residual Impurities in Sublimation-Grown SiC Substrates
• MOCVD Growth of ZnS_xSe_ Epitaxial Layers Lattice-Matched to GaP Substrates
• MOCVD Growth of ZnS_xSe_ Epitaxial Layers Lattice-Matched to GaAs Using Alkyls of Zn, S and Se
• Coherent Growth of ZnSe on GaAs by MOCVD

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