Effects of Lattice Mismatch on Crystallographic Properties of ZnS Grown on GaP and GaAs by MOCVD : Condensed Matter
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概要
- 論文の詳細を見る
The unusual phenomenon that largely lattice-mismatched ZnS layers grown on GaAs by MOCVD show better surface morphology and crystalline quality than less mismatched ZnS layers on GaP has been investigated by X-ray diffraction measurements. The results indicate that this phenomenon can be ascribed to the strain-relaxation taking place at an earlier stage of epitaxial growth on GaAs than on GaP substrates.
- 社団法人応用物理学会の論文
- 1988-01-20
著者
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Kukimoto Hiroshi
Imaging Science And Engineering Lab. Tokyo Institute Of Technology
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Matsuhashi Hiroshi
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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MATSUISHI Iwao
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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Matsuishi Iwao
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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