Organometallic Vapor Phase Epitaxial Growth of In_<1-x>Ga_xAs_yP_<1-y> on GaAs
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概要
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In_<1-x>Ga_xAs_yP_<1-y>(0.5<__-x<__-0.9, 0<__-y<__-0.55) layers have been grown on GaAs substrates by low-pressure organometallic vapor phase epitaxy using triethylindium (TEIn), triethylgallium (TEGa), arsine (AsH_3) and phosphine (PH_3). The surface morphology of the layers is mirror-like and the photoluminescence intensity is comparable to that of InGaP grown on GaAs by the same technique. The relationship between the fraction of AsH_3 flow and the solid fraction of As, y, is also mentioned.
- 社団法人応用物理学会の論文
- 1983-03-20
著者
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Mori K
Saga Univ. Saga Jpn
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Mizuta Masashi
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Mizuta Masashi
Department Of Physics And Electronics Faculty Of Engineering Osaka Prefecture University
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Kukimoto H
National Space Dev. Agency Of Japan Ibaraki Jpn
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IWAMOTO Takashi
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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Mori K
Department Of Radiological Sciences Ibaraki Prefectural University Of Health Sciences
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Kukimoto H
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology:(present Address)toppan Pri
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IWAMOTO Takashi
Central Research Laboratory, Mitsubishi Electric Corporation
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MORI Kazuo
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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Iwamoto T
Central Research Laboratory Mitsubishi Electric Corporation
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Kukimoto Hiroshi
Imaging Science And Engineering Lab. Tokyo Institute Of Technology
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Iwamoto Takashi
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Mizuta Masashi
Imaging Science And Engineering Lab. Tokyo Institute Of Technology
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