Vapor Phase Synthesis of Fluorescent Gallium Nitride Powders : Semiconductors
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概要
- 論文の詳細を見る
GaN crystalline powders have been synthesized by the reaction of a Ga vapor with ammonia at the reaction temperatures (T_r) of 900-1 100℃ under the atmospheric pressure. The size of the crystalline particles ranges from 0.2 to 2 μm. The structural and the luminescent properties depend strongly on T_r. For T_r = 1050℃, the powders consist primarily of hexagonal GaN particles, whereas those synthesized at T_r = 1000℃ contain cubic GaN particles. Photoluminescence (PL) spectra are dominated by band-edge emissions. For the powders synthesized at higher T_r, reduction in the PL intensity between 24 and 293 K indicates excellent luminescent quality. Thermal quenching is relatively significant for the powders synthesized at lower T_r. This is presumably due to enhanced nonradiative recombination at the surface because of their small particle size.
- 社団法人応用物理学会の論文
- 2001-03-15
著者
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Hara Kazuhiko
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Matsuo Y
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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MATSUNO Yuuki
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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MATSUO Yoshinori
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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