Diffusion of Defects Introduced into CdS Crystals by Electron Beam Annealing

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1984-05-20

著者

• Fujieda S

  Nec Corp. Ibaraki Jpn

• Fujieda Shinji

  Department Of Applied Physics Faculty Of Engineering The University Of Tokyo

関連論文

• Control of the Electrical Properties of AlN/thin-a-Si/GaAs MIS Diodes by GaAs Surface Pretreatments
• Effects of InP Surface Treatment on the Electrical Properties and Structures of AlN/n-InP Interface
• Interfacial Superstructure of AIN/n-GaAs(001) System Fabricated by Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces and Films
• Improvement of the Electrical Properties of the AlN/GaAs MIS System and Their Thermal Stability by GaAs Surface Stoichiometry Control : Surfaces, Interfaces and Films
• Growth Characterization of Low-Temperature MOCVD GaN : Comparison between N_2H_4 and NH_3
• Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and Hydrazine
• Diffusion of Defects Introduced into CdS Crystals by Electron Beam Annealing

スポンサーリンク