Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al-Ga-As:Si Solid System : a Novel Short Period AlAs/n-GaAs Superlattice

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1983-10-20

著者

• Mizutani Takashi

  Fundamental Research Laboratories Nec Corporation

• BABA Toshio

  Fundamental Research Laboratories, NEC Corporation

• OGAWA Masaki

  Fundamental Research Laboratories, NEC Corporation

• Baba T

  Fundamental Research Laboratories Nec Corporation:(present Office)silicon System Laboratories Nec Co

• Baba Toshio

  Fundamental And Environmental Research Laboratories Nec Corporation

• Ogawa M

  Kobe Univerisity

• Ogawa Masaki

  Fundamental Research Laboratories Nec Corporation

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• Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al-Ga-As:Si Solid System : a Novel Short Period AlAs/n-GaAs Superlattice
• Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al-Ga-As:Si Solid System : a Novel Short Period AlAs/n-GaAs Superlattice
• Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al-Ga-As:Si Solid System : a Novel Short Period AlAs/n-GaAs Superlattice
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