Conduction-Band Discontinuity of GaInAs / InP Heterojunctions with Graded Donor Concentration : Semiconductors and Semiconductors Devices

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1988-07-20

著者

• MURAKAMI T.

  Kobe Works, Kobe Steel Ltd.

• Ogawa M

  Kobe Univerisity

• OGAWA M.

  Kobe Univerisity

• MIYOSHI M.

  Kobe Univerisity

• SHIMIZU S.

  Kobe Univerisity

• MIYOSHI T.

  Kobe Univerisity

• Miyoshi M.

  Integrated Circuit Advanced Process Technology Department

関連論文

• High Performance (AlAs/n-GaAs Superlattice)/GaAs 2DEGFETs with Stabilized Threshold Voltage
• Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al-Ga-As:Si Solid System : a Novel Short Period AlAs/n-GaAs Superlattice
• Improvement of Billet Surface Quality by Ultra-high-frequency Electromagnetic Casting
• Conduction-Band Discontinuity of GaInAs / InP Heterojunctions with Graded Donor Concentration : Semiconductors and Semiconductors Devices
• Measurement of geometrical dimensions using scanning electron microscopy
• A fully automated measurement of a hole pattern using image processing technique

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