Observation of fast spontaneous emission decay in GaInAsP photonic crystal point defect nanocavity at room temperature
スポンサーリンク
概要
- 論文の詳細を見る
The spontaneous emission decay in a photonic crystal slab nanocavity with a GaInAsP quantum well active region was measured at room temperature. Even far below lasing threshold, the decay was much faster than that for the as-grown wafer. A consideration including the enhanced spontaneous emission rate by the Purcell effect, intraband relaxation of carriers, nonradiative surface recombination, spatial hole burning, and carrier diffusion enabled us to explain different decay lifetime between on- and off-resonant conditions and between different size cavities. As a result, >16-fold shorter spontaneous emission lifetime was estimated, which strongly suggests the existence of a large Purcell effect. (C) 2004 American Institute of Physics.
- American Institute of Physicsの論文
- 2004-01-11
著者
関連論文
- Fabrication of Self-Aligned Surface Tunnel Transistors with a 80-nm Gate Length
- Self-Aligned Surface Tunnel Transistors Fabricated by a Regrowth Technique
- GaInAsP Microdisk Injection Laser with Benzocyclobutene Polymer Cladding and Its Athermal Effect
- GaInAsP Microcylinder (Microdisk) Injection Laser With AlInAs (O_x) Claddings : Optics and quantum Electronics
- Proposal of Optical Near-Field Probe Using Evanescent Field of Microdisk Laser
- Quantum-efficiency Dependence of the Spin Polarization of Photoemission from a GaAs-AlGaAs Superlattice
- A High Polarization and High Quantum Efficiency Photocathode Using a GaAs -AlGaAs Superlattice
- Highly Polarized Electron Source Using InGaAs-GaAs Strained-Layer Superlattice
- H-Tree-Type Optical Clock Signal Distribution Circuit Using a Si Photonic Wire Waveguide : Optics and Quantum Electronics
- Low Loss Ultra-Small Branches in a Silicon Photonic Wire Waveguide(Special Issue on Recent Progress of Integrated Photonic Devices)
- High Performance (AlAs/n-GaAs Superlattice)/GaAs 2DEGFETs with Stabilized Threshold Voltage
- Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al-Ga-As:Si Solid System : a Novel Short Period AlAs/n-GaAs Superlattice
- DX Center-Like Trap in Selectively Si-Doped AlAs/GaAs Superlattices
- Thermal Stability of a Short Period AlAs/n-GaAs Superlattice
- High Luminescence Polarization of InGaAs-AlGaAs Strained Layer Superlattice Fabricated as a Photocathode of Spin-Polarized Electron Source : Optical Properties of Condensed Matter
- Strong enhancement of light extraction efficiency in GaInAsP 2-D-arranged microcolumns
- Mechanism of Layer-by-Layer Oxidation of Si(001)Surfaces by Two-Dimensional Oxide-Island Nucleation at SiO_2/Si Interfaces
- Mechanism of Layer-by-Layer Oxidation of Si (001) Surfaces Proceeding by Two-Dimensional Oxide-Island Nucleation at SiO_2/Si Interfaces
- Observation of fast spontaneous emission decay in GaInAsP photonic crystal point defect nanocavity at room temperature
- Light localizations in photonic crystal line defect waveguides
- Ultralow threshold and single-mode lasing in microgear lasers and its fusion with quasi-periodic photonic crystals
- A Novel Short Cavity Laser with Deep Grating DBRs
- Low Threshold GaInAsP Lasers with Semiconductor/Air Distributed Bragg Reflector Fabricated by Inductively Coupled Plasma Etching
- Silicon nano-scale devices
- Single-Electron Memory Fabricated from Doped Silicon-on-Insulator Film
- Hot Electron Transport in Si-MOSFETs
- Transport Properties in Sub-10-nm-gate EJ-MOSFETs
- Si In-Plane Floating-Dot Memory with a Single Electron Transistor
- Fabrication and Characterization of 14-nm-Gate-Length EJ-MOSFETs
- Proposal of Pseudo Source and Drain MOSFETs for Evaluating 10-nm Gate MOSFETs
- Spatial Distributions of Individual Traps in a Si/SiO_2 Interface
- Spatial Distributions of Individual Traps in a Si/SiO_2 Interface