Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-02-15
著者
-
Sunakawa H
Nec Corp. Ibaraki Jpn
-
Yamaguchi A
System Devices And Fundamental Research Nec Corporation
-
KURAMOTO Masaru
The authors are with Optoelectronics and High Frequency Device Res. Labs., NEC Corporation
-
MIZUTA Masashi
The authors are with Optoelectronics and High Frequency Device Res. Labs., NEC Corporation
-
KURAMOTO Masaru
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
-
SASAOKA Chiaki
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
-
HISANAGA Yukihiro
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
-
KIMURA Akitaka
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
-
YAMAGUCHI A.
Fundamental Research Laboratories, NEC Corporation
-
SUNAKAWA Haruo
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
-
KURODA Naotaka
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
-
NIDO Masaaki
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
-
USUI Akira
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
-
MIZUTA Masashi
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
-
Nido M
Photonic And Wireless Devices Research Laboratories Nec Corporation
-
Sasaoka C
Photonic And Wireless Devices Research Laboratories Nec Corporation
-
Mizuta M
Photonic And Wireless Devices Research Laboratories Nec Corporation
-
Kuroda N
Optoelectronics And High Frequency Device Research Laboratories Nec Corporation
-
Kuramoto M
Photonic And Wireless Devices Research Laboratories Nec Corporation
-
Kuramoto M
The Authors Are With Optoelectronics And High Frequency Device Res. Labs. Nec Corporation
-
Hisanaga Yukihiro
Optoelectronics And High Frequency Device Research Laboratories Nec Corporation
-
Yamaguchi A.
Fundamental Research Laboratories Nec Corporation
-
Kuroda Naotaka
Optoelectronics And High Frequency Device Research Laboratories Nec Corporation
-
Usui A
Nec Corp. Ibaraki Jpn
-
Usui Akira
Optoelectronics And High Frequency Device Research Laboratories Nec Corporation
-
Usui A
Aist Ibaraki
-
Kimura A
Photonic And Wireless Devices Research Laboratories Nec Corporation
-
Mizuta Masashi
Optoelectronics And High Frequency Device Research Laboratories Nec Corporation
関連論文
- Alloy Semiconductor System with Tailorable Band-Tail: A Band-State Model and Its Verification Using Laser Characteristics of InGaN Material System : Optics and Quantum Electronics
- InGaN MQW Lasr Diodes Grown on an n-GaN Substrate with a Backside n-Contact(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
- X-Ray Rocking Curve Determination of Twist and Tilt Angles in GaN Films Grown by an Epitaxial-Lateral-Overgrowth Technique
- Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact
- Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
- Surface Morphology Study for Hexagonal GaN Grown on GaAs(100) Substrates by Hydride Vapor Phase Epitaxy
- Growth of InN by Chloride-Transport Vapor Phase Epitaxy
- Single Domain Hexagonal GaN Films on GaAs (100) Vicinal Substrates Grown by Hydride Vapor Phase Epitaxy
- Formation of Novel Trinuclear Ruthenium Alkoxo Complexes and a Tetrameric Ruthenium Hydroxo Complex. Crystal Structure of 〔η^5-C_5Me_5)Ru〕_3(μ_3-O)(μ_3-O^iPr) and 〔η^5-C_5Me^5)Ru(μ_3-OH)〕_4
- Dislocation propagation in GaN films formed by epitaxial lateral overgrowth
- Novel Ridge-Type InGaN Multiple-Quantum-Well Laser Diodes Fabricated by Selective Area Re-Growth on n-GaN Substrates : Semiconductors
- Anisotropic Optical Matrix Elements in Quantum Wells with Various Substrate Orientations
- Nanoscale InP Islands for Quantum Box Structures by Hydride Vapor Phase Epitaxy
- Room Temperature cw Operation of Visible InGaAsP Double Heterostructure Laser at 671 nm Grown by Hydride VPE
- VPE-Grown 1.3 μm InGaAsP/InP Double-Channel Planar Buried-Heterostructure Laser Diode with LPE-Burying Layers
- Hepatic Uptake of Lipid-Soluble Drugs from Fat Emulsion
- SOLVENT DRAG EFFECT IN DRUG INTESTINAL ABSORPTION : STUDIES ON DRUG AND D_2O ABSORPTION CLEARANCES
- Thermal Desorption of Galliumchloride Adsorbed on GaAs (100)
- Optical Recombination Processes in High-Quality GaN Films and InGaN Quantum Wells Grown on Facet-Initiated Epitaxial Lateral Overgrown GaN Substrates
- Optical Recombination Processes in High Quality GaN Films and InGaN Quantum Wells Grown on FIELO-GaN Substrates
- SOLVENT DRAG IN JEJUNAL ABSORPTION OF SALICYLIC ACID AND ANTIPYRINE OBTAINED BY IN SITU SINGLE-PASS RERFUSION METHOD IN RAT
- SOLVENT DRAG EFFECT IN DRUG INTESTINAL ABSORPTION. II. STUDIES ON DRUG ABSORPTION CLEARANCE AND WATER INFLUX
- SOLVENT DRAG EFFECT IN DRUG INTESTINAL ABSORPTION. I. STUDIES ON DRUG AND D_2O ABSORPTION CLEARANCES