InGaN MQW Lasr Diodes Grown on an n-GaN Substrate with a Backside n-Contact(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
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概要
- 論文の詳細を見る
Continuous-wave operation at room-temperature has been demonstrated for InGaN multi-quantum-well (MQW) laser diodes (LDs) grown on FIELO^* GaN substrates with a backside n-contact. This was made possible by introducing important new concept of reducing threading dislocations that occur during the growth of the GaN substrates. We found that InGaN active layers grown on FIELO GaN are superior to those grown on conventional sapphire substrates in terms of their growth mode and the resultant In compositional fluctuation. The fabricated laser diode shows the threshold current, the threshold current density and the threshold voltage were 36mA, 5.4ka/cm^2 and 7.5V, respectively, with the lasing wavelength of 412nm and internal quantum efficiency as high as 98%.
- 社団法人電子情報通信学会の論文
- 2000-04-25
著者
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Yamaguchi A
System Devices And Fundamental Research Nec Corporation
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KURAMOTO Masaru
The authors are with Optoelectronics and High Frequency Device Res. Labs., NEC Corporation
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YAMAGUCHI A.Atsushi
The author is with Fundamental Res. Labs., NEC Corporation
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USUI Akira
The authors are with Optoelectronics and High Frequency Device Res. Labs., NEC Corporation
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MIZUTA Masashi
The authors are with Optoelectronics and High Frequency Device Res. Labs., NEC Corporation
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Mizuta M
Photonic And Wireless Devices Research Laboratories Nec Corporation
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Kuramoto M
Photonic And Wireless Devices Research Laboratories Nec Corporation
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Kuramoto M
The Authors Are With Optoelectronics And High Frequency Device Res. Labs. Nec Corporation
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Usui A
Nec Corp. Ibaraki Jpn
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Usui Akira
Optoelectronics And High Frequency Device Research Laboratories Nec Corporation
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Usui A
Aist Ibaraki
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Kuramoto Masaru
The Authors Are With Optoelectronics And High Frequency Device Res. Labs. Nec Corporation
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Usui Akira
The Authors Are With Optoelectronics And High Frequency Device Res. Labs. Nec Corporation
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Mizuta Masashi
The Authors Are With Optoelectronics And High Frequency Device Res. Labs. Nec Corporation
関連論文
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- InGaN MQW Lasr Diodes Grown on an n-GaN Substrate with a Backside n-Contact(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
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