Usui A | Aist Ibaraki

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概要

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著作論文

InGaN MQW Lasr Diodes Grown on an n-GaN Substrate with a Backside n-Contact(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
X-Ray Rocking Curve Determination of Twist and Tilt Angles in GaN Films Grown by an Epitaxial-Lateral-Overgrowth Technique
Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact
Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
Surface Morphology Study for Hexagonal GaN Grown on GaAs(100) Substrates by Hydride Vapor Phase Epitaxy
Growth of InN by Chloride-Transport Vapor Phase Epitaxy
Single Domain Hexagonal GaN Films on GaAs (100) Vicinal Substrates Grown by Hydride Vapor Phase Epitaxy
Formation of Novel Trinuclear Ruthenium Alkoxo Complexes and a Tetrameric Ruthenium Hydroxo Complex. Crystal Structure of 〔η^5-C_5Me_5)Ru〕_3(μ_3-O)(μ_3-O^iPr) and 〔η^5-C_5Me^5)Ru(μ_3-OH)〕_4
Dislocation propagation in GaN films formed by epitaxial lateral overgrowth
Anisotropic Optical Matrix Elements in Quantum Wells with Various Substrate Orientations
Nanoscale InP Islands for Quantum Box Structures by Hydride Vapor Phase Epitaxy

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