V-groove AlGaAs/GaAs multilayers grown on patterned GaAs substrates with submicron gratings
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概要
- 論文の詳細を見る
Vertical-stacked AlGaAs/GaAs multilayers with preserving the same growth profile as an initial growth surface above 1.0 μm thick have been successfully grown by a low pressure metalorganic chemical vapor deposition on GaAs substrates with submicron gratings, 430 nm wide and 200 nm deep. It is an important step to the realization of increasing complex optoelectronic devices such as one-step grown distributed feedback lasers and two-dimensional photonic crystals. The important roles of GaAs buffer in this constant growth on submicron gratings, particularly to overcome mass transport effects during thermal cleaning and to improve the uniformity of gratings, are studied. The variations of the growth profiles are then investigated in detail as functions of the growth temperature and AlAs mole fraction using high-resolution scanning electron microscope.
- 社団法人電子情報通信学会の論文
- 2000-02-10
著者
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Wang X‐l
National Institute Of Advanced Industrial Science And Technology (aist)
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Son Chang-sik
National Institute Of Advanced Industrial Science And Technology (aist):crest-japan Science And Tech
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Son Chang-sik
Department Of Materials Science Korea University・semiconductor Materials Research Center Korea Insti
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Wang Xue-lun
Division Of Electron Devices Electrotechnical Laboratory
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WANG Xue-Lun
Electrotechnical Laboratory
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OGURA Mutsuo
Electrotechnical Laboratory
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KIM Tae
Electrotechnical Laboratory(ETL)
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Son Chang-Sik
Electron Device Division, Electrotechnical Laboratory
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Kim Tae
National Institute Of Advanced Industrial Science And Technology (aist):crest-japan Science And Tech
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Ogura Mutsuo
National Institute Of Advanced Industrial Science And Technology (aist)
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Ogura Mutsuo
National Institute Of Advanced Industrial Science And Technology (aist):crest-japan Science And Tech
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