Fabrication of Quantum Wire and Minute Buried Heterostructure by In Situ Etching and Selective MOCVD Growth
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概要
- 論文の詳細を見る
Among the various methods used for the fabrication of III–V semiconductor quantum nanostructures, the flow rate modulation epitaxy (FME) on a patterned substrate, in-situ dry-etching and regrowth process, and in-situ gas-phase etching and regrowth process are presently investigated from the viewpoints of interface quality, uniformity, and freedom in the structural and material design.
- 1996-02-28
著者
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WANG Xue-Lun
Electrotechnical Laboratory
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OGURA Mutsuo
Electrotechnical Laboratory
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MATSUHATA Hirofumi
Electrotechnical Laboratory
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TADA Tetsuya
Electrotechnical Laboratory
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HAMOUDI Ali
Electrotechnical Laboratory
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IKAWA Seiji
Electrotechnical Laboratory
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MIYAGAWA Takehiko
Electrotechnical Laboratory
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TAKEYAMA Kazuhisa
Electrotechnical Laboratory
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Tada Tetsuya
Electrotechnical Laboratory, 1-1-4 Umesono, Tsukuba, 305 Japan
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Miyagawa Takehiko
Electrotechnical Laboratory, 1-1-4 Umesono, Tsukuba, 305 Japan
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Wang Xue-Lun
Electrotechnical Laboratory, 1-1-4 Umesono, Tsukuba, 305 Japan
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Ikawa Seiji
Electrotechnical Laboratory, 1-1-4 Umesono, Tsukuba, 305 Japan
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Matsuhata Hirofumi
Electrotechnical Laboratory, 1-1-4 Umesono, Tsukuba, 305 Japan
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Takeyama Kazuhisa
Electrotechnical Laboratory, 1-1-4 Umesono, Tsukuba, 305 Japan
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