Surface Lattice Strain Relaxation at the Initial Stage of Heteroepitaxial Growth of In_xGa_<1-x>As on GaAs by Molecular Beam Epitaxy
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概要
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The surface morphology, surface lattice parameter, and growth mechanism of epilayers during molecular beam epitaxy are investigated using a reflection high-energy electron diffraction observation system. The intensity and half width of diffraction streaks, together with the surface lattice parameter of In_xGa_<1-x>As grown on (001)GaAs substrates are measured in situ. The growth of In_xGa_<1-x>As is conducted under an As-stabilized growth condition. The Stranski-Krastanov growth mode is dominant at the initial stage of heteroepitaxy. The surface lattice parameters of In_xGa_<1-x>As epilayers match those of GaAs below a critical thickness (h_c), while they show an abrupt increase toward a bulk In_xGa_<1-x>As lattice parameter beyond the h_c value. The observed h_c value almost coincides with the critical thickness for the transition of the growth mode from 2D to 3D.
- 社団法人応用物理学会の論文
- 1989-03-20
著者
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Yao Takafumi
Electrical Laboratory
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Nakao Hiroshi
Electrotechnical Laboratory:science University Of Tokyo
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