Formation Kinetics of Niobium and Molybdenum Silicides Induced by Ion Bombardment
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概要
- 論文の詳細を見る
Kinetics of silicide formation induced by ion bombardment was investigated in Nb-deposited-on-Si (Nb/Si) and Mo/Si systems by using a backscattering technique in order to elucidate formation mechanisms. The kinetics was observed to be different in these systems. In Mo/Si, the amount of Si atoms intermixed into the silicide is proportional to (dose)^<1/2> and independent of the properties of the Si substrate; in Nb/Si, it is proportional to the nuclear energy deposition by the ion at the silicide/Si interface and is affected depending on whether the substrate is amorphous or crystalline. From these results and the temperature dependence observed, it is concluded that defects produced by the ion cause the silicide growth by inducing the reaction at the silicide/Si interface and atomic diffusion in the silicide layer; in Nb/Si the former process is rate limited and in Mo/Si it is the latter.
- 社団法人応用物理学会の論文
- 1984-03-20
著者
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Tanoue Hisao
Electrotechnical Laboratory
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Kanayama Toshihiko
Electrotechnical Laboratory
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Tsurushima Toshio
Electrotechnical Laboratory
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