SOI Formation Using Lateral Solid-Phase Epitaxy Induced by Focused Ion Beam : Beam Induced Physics and Chemistry
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1989-12-30
著者
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KANEMARU Seigo
Electrotechnical Laboratory
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Kanemaru Seigo
Electrotechnical Lanoratory
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Kanayama Toshihiko
Electrotechnical Laboratory
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TANAUE Hisao
Electrotechnical Lanoratory
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KOMURO Masamori
Electrotechnical Lanoratory
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Kanayama Toshihiko
Electrotechnical Lanoratory
関連論文
- Nanoscale Evaluation of Structure and Surface Potential of Gated Field Emitters by Scanning Maxwell-Stress Microscope
- Fabrication of 40-150 nm Gate Length Ultrathin n-MOSFETs Using Epitaxial Layer Transfer SOI Wafers
- Fabrication of 40-150nm Gate Length Ultrathin n-MOSFETs Using ELTRAN SOI Wafers
- Fabrication of Metal-Oxide-Semiconductor Field-Effect-Transistor-Structured Silicon Field Emitters with a Polysilicon Dual Gate
- Fabrication of a New Si Field Emitter Tip with Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Structure
- A New Metal-Oxide-Semiconductor Field-Effect-Transistor-Structured Si Field Emitter Tip
- Emission Characteristics of Ion-Implanted Silicon Emitter Tips
- Charging Damage of Silicon-on-Insulator (SOI) Wafer Determined by Scanning Maxwell-Stress Microscopy
- CHF_3 Plasma Treatment of Si Field Emitter Arrays For No Damage Vacuum Packaging
- Electrical Characteristics of Air-Bridge-Structured Silicon Nanowire Fabricated by Micromachining a Silicon-on-Insulator Substrate
- Fabrication of a Nanometer-Scale Si-Wire by Micromachining of a Silicon-on-Insulator Substrate
- SOI Formation Using Lateral Solid-Phase Epitaxy Induced by Focused Ion Beam : Beam Induced Physics and Chemistry
- Emission Characteristics of Amorphous Silicon Field Emitter Arrays Sealed in a Vacuum Package
- Fabrication of a New Field Emitter Array with a Built-in Thin-Film Transistor on Glass
- Fabrication of Si Field Emitter Tip for a Three-Dimensional Vacuum Magnetic Sensor
- Fabrication of Silicon Field Emitter Arrays Integrated with Beam Focusing Lens
- Fabrication of Field Emitter Arrays with Hydrogenated Amorphous Silicon on Glass
- High Temperature Stable W-GaAs Schottky Barrier
- Formation Kinetics of Niobium and Molybdenum Silicides Induced by Ion Bombardment
- Lateral Solid-Phase Epitaxy of Si Induced by Focused Ion Beams
- Feasibility of Vacuum Microelectronics Voltage Comparator
- Fabrication and Characterization of Comb-Shaped Lateral Field-Emitter Arrays
- Low-Operation-Voltage Comb-Shaped Field Emitter Array
- AlN as a Dry-Etch Durable Resist for Electron and Ion Beam Lithography
- Fabrication of Silicon Field Emitter Arrays with 0.1-μm-Diameter Gate by Focused Ion Beam Lithography
- Fabrication of Petal-Shaped Vertical Field Emitter Arrays
- Fabrication and Characterization of Cross-Edge-Structured Vertical Field Emitter Arrays
- Vacuum Microtriode with Comb-Shaped Lateral Field-Emitter Array
- Optical-Heterodyne Detection of Mask-to-Wafer Displacement for Fine Alignment
- A New Interferometric Displacement-Detection Method for Mask-to-Wafer Alignment Using Symmetrically-Arranged Three Gratings
- Ion Trapping by External Field of AC Electrical Quadrupole Superimposed on Static Attraction
- Charging Damage of Silicon-on-Insulator (SOI) Wafer Determined by Scanning Maxwell-Stress Microscopy