Fabrication of Silicon Field Emitter Arrays with 0.1-μm-Diameter Gate by Focused Ion Beam Lithography
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概要
- 論文の詳細を見る
Cone-shaped silicon (Si) field-emitter arrays (FEAs) with 0.1-μm-diameter gates were fabricated by focused ion beam (FIB) lithography. In the fabrication process, a 200 keV Be^<2+> FIB with a beam diameter of 0.06 μm was irradiated to a positive-tone electron-beam resist to form an array of silicon oxide (SiO_x) disks used as masks for cone-shape etching of a Si substrate. We have succeeded in the operation of the present FEA and obtained the emission current of 1 nA/tip at the gate voltage of 25 V.
- 社団法人応用物理学会の論文
- 1995-12-30
著者
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ITOH Junji
Electrotechnical Laboratory
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KANEMARU Seigo
Electrotechnical Laboratory
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Kanemaru S
Aist Ibaraki Jpn
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Kanemaru Seigo
Nanoelectronics Research Institute Aist
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Kanemaru Seigo
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Kanemaru Seigo
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Kanemaru Seigo
Tsukuba Laboratory Yaskawa Electric Co. Ltd.
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Itoh J
Aist Ibaraki Jpn
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Itoh J
Nanoelectronics Research Institute Aist
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Itoh Junji
Tsukuba Laboratory Yaskawa Electric Co. Ltd.
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Nakao Masao
Microelectronics Research Center Sanyo Electric Co. Ltd.
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YAMAOKA Yoshikazu
Microelectronics Research Center, Sanyo Electric Co., Ltd.
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GOTO Takashi
Microelectronics Research Center, Sanyo Electric Co., Ltd.
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Yamaoka Yoshikazu
Microelectronics Research Center Sanyo Electric Co. Ltd.
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Goto Takashi
Microelectronics Research Center Sanyo Electric Co. Ltd.
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Kanemaru Seigo
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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