Low-Voltage Operation GaAs Receiver Front-End IC (Special Issue on Low-Power and High-Speed LSI Technologies)
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概要
- 論文の詳細を見る
Low-voltage technology in front-end GaAs IC for mobile communication equipment will be presented. New techniques in combination with different threshold voltage (V_<th>) FETs for an amplifier and a mixer were investigated for low-voltage operation of the IC. The amplifier and mixer consist of a cascode connected to FETs with shallow and deep V_<th>. The best suitable distribution of the supply voltages was accomplished for each FETs by using a combination of different V_<th>, and excellent RF characteristics of the IC were obtained, even at low voltage operation. In addition, this front-end IC has a high image rejection ratio (IRR) without using an external image rejection filter, but by using high Q-value input and intermediate matching circuits. The fabrication process used an asymmetric self-aligned BP-LDD process and high dielectric constant (high-ε_r) on-chip bypass capacitors using SrTiO_3 contributed to a reduction in dissipation current, chip size and parasitic reactance in the source wires. The fabricated IC showed a conversion gain (CG) of 23 dB, noise figure (NF) of 2.8 dB, 3rd order output intercept point (IP3out) of 3 dBm, image rejection ratio (IRR) over 20 dBc and LO to RF isolation over 25 dB, operating by 1.0 V single supply with dissipation current of 6.8 mA at 880 MHz. At 1.9 GHz, the IC also showed excellent RF characteristics with dissipation current of 6.5 mA at 1.0 V. The IC die is very small the size is 0.75mm×0.75mm, and is molded in a mini-6pin plastic package.
- 社団法人電子情報通信学会の論文
- 1997-12-25
著者
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Ishikawa O
Matsushita Electronics Corp. Moriguchi‐shi Jpn
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ITOH Junji
Electrotechnical Laboratory
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Ishikawa O
Departments Of Dermatology Gunma University Graduate School Of Medicine
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Itoh J
Aist Ibaraki Jpn
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Itoh J
Nanoelectronics Research Institute Aist
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Itoh Junji
Tsukuba Laboratory Yaskawa Electric Co. Ltd.
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NISHITSUJI Mitsuru
Electronics Research Laboratory, Matsushita Electronics Corporation
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Nishitsuji M
Matsushita Electronics Corp. Nagaokakyo‐shi Jpn
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NAKATSUKA Tadayoshi
Electronics Research Laboratory, Matsushita Electronics Corporation
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UDA Tomoya
Electronics Research Laboratory, Matsushita Electronics Corporation
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ISHIKAWA Osamu
Electronics Research Laboratory, Matsushita Electronics Corporation
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Uda Tomoya
Electronics Research Laboratory Matsushita Electronics Corporation
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Nisijima Masaaki
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Nakatsuka Tadayoshi
Electronics Research Laboratory Matsushita Electronics Corporation
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