Fabrication of Silicon Field Emitter Arrays Integrated with Beam Focusing Lens
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概要
- 論文の詳細を見る
A new field emitter structure capable of generating a focused electron beam (FEB) was fabricated. The present structure is basically similar to a double-gated structure, however, the two gate openings are arranged in the same way as a confocal in-plane lens structure. The inner gate acts as an extraction gate with a 0.6-μm-diameter opening and the outer one acts as an electrostatic focusing lens with a 2.4-μm-diameter opening. The field emission characteristics were evaluated and a beam current of 70 nA/tip was obtained when a bias voltage of 70 V was applied to the two gates. The beam focusing characteristics were also evaluated and the beam could be focused by decreasing the focusing lens voltage without a significant decrease in the beam current.
- 社団法人応用物理学会の論文
- 1996-12-30
著者
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ITOH Junji
Electrotechnical Laboratory
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KANEMARU Seigo
Electrotechnical Laboratory
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Kanemaru S
Aist Ibaraki Jpn
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Kanemaru Seigo
Nanoelectronics Research Institute Aist
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Kanemaru Seigo
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Kanemaru Seigo
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Kanemaru Seigo
Tsukuba Laboratory Yaskawa Electric Co. Ltd.
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Itoh J
Nanoelectronics Research Institute Aist
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Itoh Junji
Tsukuba Laboratory Yaskawa Electric Co. Ltd.
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YAMAOKA Yoshikazu
Electrotechnical Laboratory
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YAMAOKA Yoshikazu
Microelectronics Research Center, Sanyo Electric Co., Ltd.
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Yamaoka Yoshikazu
Microelectronics Research Center Sanyo Electric Co. Ltd.
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Kanemaru Seigo
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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