Emission Statistics for HfC Emitter Arrays after Residual Gas Exposure
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概要
- 論文の詳細を見る
Field emission arrays (FEAs) consisting of hafnium carbide (HfC)-coated silicon (Si) emitters (HfC emitters) have been fabricated. The FEA emission properties were measured in ultrahigh-vacuum conditions and after being subjected to Ar and O2 residual gases with partial pressures in the range of $10^{-6}$ to $10^{-4}$ Pa. The influence of residual gases on the FEA field emission properties has been assessed using the model parameter extraction method. The array field emission model considers emitters with different radii and work functions. Fast and accurate results are obtained using a nonlinear parameter extraction procedure. HfC emitters achieve high emission currents, low noise levels and long-term emission stability.
- 2005-08-15
著者
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Filip Valeriu
Universiiy Of Buchareg Faculty Of Physics
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Kanemaru Seigo
Nanoelectronics Research Institute Aist
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Itoh Junji
Nanoelectronics Research Institute Aist
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Nagao Masayoshi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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NICOLAESCU Dan
Nanoelectronics Research Institute, AIST
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Itoh Junji
Nanoelectronics Research Institute, AIST, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Sato Takanobu
Institute of Appied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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Nagao Masayoshi
Nanoelectronics Research Institute, AIST, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Nicolaescu Dan
Nanoelectronics Research Institute, AIST, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Filip Valeriu
University of Bucharest, Faculty of Physics, P. O. Box MG-11, Bucharest-Magurele 76900, Romania
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