Lateral Solid-Phase Epitaxy of Si Induced by Focused Ion Beams
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概要
- 論文の詳細を見る
Thin 200-nm-thick Si crystals were grown in Si layers amorphized with 800-keV As^<2+> ions by inducing lateral solid-phase epitaxy at 500℃ with a 140-keV Si^<2+> psuedo-linear ion beam formed by scanning a point-focused beam at 5 kHz. It is shown that reduction of dose rate of the ion beam is crucially important to induce the epitaxy because the amount of damage produced by the ions significantly increases with the dose rate and even amorphization occurs at a higher dose rate.
- 社団法人応用物理学会の論文
- 1987-02-20
著者
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KOMURO Masanori
Electrotechnical Laboratory
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Tanoue Hisao
Electrotechnical Laboratory
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Kanayama Toshihiko
Electrotechnical Laboratory
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