Broad-Pulsed Ga Ion-Beam-Assisted Etching of Si with Cl_2

概要

論文の詳細を見る
The characteristics of ion-beam-assisted etching (IBAE) of Si with Cl_2 have been investigated using a broad-pulsed Ga ion beam, with several parameters such as Cl_2 gas flux, ion beam dwell time, sample temperature, and beam diameter. A simple adsorption model where the density of the adsorbed Cl_2 molecules mainly rules the etching yield, can explain the trend of the process in a short dwell-time region of less than 1 ms, and etching parameters are determined. However in a longer dwell-time region of more than 10 ms, the experiment showed several times higher etching yield than the prediction using the simple model with a 2.2-μm-diam beam. The etching model with consideration of Cl_2 surface diffusion can explain this difference in etching yield and shows good agreement with the experiment throughout the entire region of dwell time. A diffusion coefficient of 8.0×10^<-6>cm^2/s at room temperature was obtained by fitting theoretical curves in the experiment.
社団法人応用物理学会の論文
1993-12-30