Focused Ion Beam Lithography with Transition Metal Oxide Resists
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概要
- 論文の詳細を見る
The microlithographic behavior of inorganic resists for focused ion beam (FIB) has been studied for thin amorphous films of WO3, MoO3, V2O5, a mixture thereof and Ta2O5 using $20{\sim}70$ keV Ga+ FIB. The exposure characteristics, composition at the film surfaces and electrical properties have been investigated in order to evaluate the mechanism of the microlithographic behavior. A study of line exposure indicates that the resolution of these resists is determined by the FIB diameter owing to their high contrast. It is also demonstrated that this resist work is directly applicable to fine patterning of W and Mo.
- 1989-10-20
著者
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Atoda Nobufumi
Electrotechnical Laboratory
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Koshida Nobuyoshi
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
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KOMURO Masanori
Electrotechnical Laboratory
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Ando Masanobu
Tokyo University Of Agriculture And Technology
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OHTAKA Koichi
Tokyo University of Agriculture and Technology
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Komuro Masanori
Electrotechnical Laboratory, Tsukuba, Ibaraki 305
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Koshida Nobuyoshi
Tokyo University of Agriculture and Technology, Koganei, Tokyo 184
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Ando Masanobu
Tokyo University of Agriculture and Technology, Koganei, Tokyo 184
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