Improved Photoconduction Effects of Nanometer-Sized Si Dot Multilayers

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概要

• 論文の詳細を見る
• 2007-09-19

著者

• Koshida Nobuyoshi

  Tokyo Univ. Agriculture And Technol. Tokyo Jpn

• HIRANO Yoshiyuki

  NHK Science & Technical Research Laboratories

• Hirano Yoshiyuki

  Nhk Science And Technical Research Laboratories

• Yamazaki Susumu

  Nhk Science And Technical Research Laboratories

• Koshida Nobuyoshi

  Tokyo University Of Agriculture And Technology

関連論文

• Raman Spectroscopy and Positron Lifetime Studies of Structural Relaxation and Defect Evolution in Amorphous Silicon
• Photoluminescence from Deuterium Terminated Porous Silicon
• Focused Ion Beam Lithography with Transition Metal Oxide Resists : Lithography Technology
• Improved Photoconduction Effects of Nanometer-Sized Si Dot Multilayers
• Focused Ion Beam Lithography with Transition Metal Oxide Resists
• Improved Photoconduction Effects of Nanometer-Sized Silicon Dot Multilayers

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