Improved Photoconduction Effects of Nanometer-Sized Silicon Dot Multilayers

概要

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We have been developing a photoconductive film consisting of a nanometer-sized Si dot multilayer for use as the target of a highly sensitive and functional image sensor. The nanometer-sized Si dot multilayer (100 nm in thickness) was deposited by sequentially forming self-assembled Si dots and carrying out their subsequent thermal oxidation. The correlation between the fabrication condition and the photoconductive properties was investigated for fabricated Si nanodot multilayer samples under a UV light incidence. It was shown that the quantum efficiency can significantly be improved by increasing the spatial density of Si nanodots and passivating interfacial dangling bonds with hydrogen termination. Under appropriate processing parameters, a quantum efficiency higher than 50% can be obtained even at low bias voltages below 1 V. The Si nanodot multilayer is potentially useful as a highly sensitive image sensing target compatible with low-voltage operation.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2008-04-25