Control of Current in 2DEG Channel by Oxide Wire Formed Using AFM
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概要
- 論文の詳細を見る
We have succeeded in depleting a two-dimensional electron gas channel using an oxide wire formed with an atomic force microscope. Currents in the channel depend on the height of the oxide wire on the delta-doped high-electron-mobility transistor. The current in the sample with a 20 nm-thick oxide wire is approximately one hundred times lower than that without the wire.
- 社団法人応用物理学会の論文
- 1995-02-28
著者
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Ishii Masami
Electrotechnical Laboratory
-
Matsumoto Kazuhiko
Electrotechnical Laboratory (elt)
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Matsumoto Kazuhiko
Electrotechnical Laboratory
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