Surface Observation and Modification of Si Substrate in NH_4F and H_2SO_4 Solutions
スポンサーリンク
概要
- 論文の詳細を見る
- 1996-02-01
著者
-
ANDO Akira
National Institute for Fusion Science
-
Ando Akira
Murata Mfg. Co. Ltd.
-
Matsumoto K
Electrotechnical Lab. Ibaraki‐kenn Jpn
-
Matsumoto Kazuhiko
Electrotechnical Laboratory (etl)
-
Matsumoto Kazuhiko
Advanced Industrial Science And Technology:tsukuba University:crest
-
MIKI Kazushi
Research Center for Advanced Carbon Materials and Nanotechnology Research Institute National Institu
-
MIKI Kazushi
Nanotechnology Research Institute-AIST
-
TOKUMOTO Hiroshi
Electrotechmical Laboratory
-
ANDO Atsushi
Electrotechnical Laboratory (ETL)
-
MIKI Kazushi
Electrotechnical Laboratory (ETL)
-
MORITA Yukinori
National Institute for Advanced Interdisciplinary Research
-
Morita Y
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
-
Tokumoto Hiroshi
Jrcat National Institute For Advanced Interdisciplinary Research
-
Tokumoto Hiroshi
Elecltrotechnical Laboratory
-
Tokumoto Hiroshi
Electrotechnical Laboratory (etl)
-
Tokumoto Hiroshi
Joint Research Center For Atom Technology (jrcat)
-
Tokumoto Hiroshi
Joint Research Center For Atom Technology (jrcat):national Institute Of Advanced Industrial Science
-
Tokumoto Hiroshi
Joint Research Center For Atom Technology (jrcat)-national Institute Of Advanced Industrial Science
-
Matsumoto Kazuhiko
Electrotechnical Laboratory (elt)
-
Matsumoto Kazuhisa
Sumitomo Electric Industries Ltd.
-
Shimizu Tadao
Department Of Physics University Of Tokyo
-
Shimizu T
Department Of Electrical And Electronic Engineering Kanazawa University
-
Ando A
Murata Mfg. Co. Ltd.
-
Miki K
Electrotechnical Laboratory (etl)
-
Miki Kazushi
National Institute Of Materials Science (nims)
-
Miki Kazushi
Aist
-
Miki Kazushi
Nanoarchitecture Group Organic Nanomaterials Center National Institute For Materials Science
-
Miki Kazushi
Electrotechnical Laboratory
-
SHIMIZU Tetsuo
National Institute for Advanced Interdisciplinary Research (NAIR)
-
Morita Y
Consortium Fuer Elektrochemishe Ind. Gmbh Muenchen Deu
-
Shimizu T
Chiba Univ. Chiba Jpn
-
Morita Yukinori
National Inst. Of Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
-
Tokumoto Hiroshi
Electrotechincal Laboratory
-
Matsumoto Kazuhiko
Electrotechnical Laboratory
関連論文
- Measurement of Edge Density Profiles and Fluctuations in the H-Mode Discharge of the Compact Helical System (CHS) with a Thermal Neutral Lithium Beam Probe
- Effect of Plasma Current on Magnetohydrodynamic Modes in Neutral Beam Heated Plasmas in Compact Helical System
- Characteristics of a Supersonic Plasma Flow in a Magnetic Nozzle
- High-Energy Acceleration of an Intense Negative Ion Beam
- Selective Growth of Monoatomic Cu Rows at Step Edges on Si(111) Substrates in Ultralow-Dissolved-Oxygen Water
- Selective Growth of Cu Nanowires on Si(111) Substrates
- Leakage Current Distribution of Cu-Contaminated Thin SiO_2
- GaAs Pseudo-Heterojunction Bipolar Transistor with a Heavily Carbon-Doped Base
- Improved Electron-Beam/Deep-Ultraviolet Intralevel Mix-and-Match Lithography with 100 nm Resolution
- X-Ray Study of Compressibilities of β-(BEDT-TTF)_2I_3 under Hydrostatic Pressure
- Kink Deformation of (TMTSF)_2CIO_4 Single Crystal and Its Influence on Electrecal Resistivity
- Changes in Gene Expression of Commercial Baker's Yeast during an Air-Drying Process that Simulates Dried Yeast Production(BREWING AND FOOD TECHNOLOGY)
- Ultrafast Metal-Semiconductor-Metal Photoconductive Switches Fabricated Using an Atomic Force Microscope
- Surface Modification of Niobium (Nb) by Atomic Force Microscope (AFM) Nano-Oxidation Process
- Fabrication and Characterization of Nb/Nb Oxides-Based Single Electron Transistors (SETs)
- Side Gate Single Electron Transistor with Multi-Islands Structure Operated at Room Temperature Made by STM/AFM Nano-Oxidation Process
- Room Temperature Operation of Single Electron Transistor Made by STM Nano-Oxidation Process
- V-Shaped Gate High Electron Mobility Transistor (VHEMT)
- Accumulation-Mode GaAlAs/GaAs Bipolar Transistor
- Surface Preparation, Growth, and Interface Control of Ultrathin Gate Oxides
- Tip-Induced Surface Disorder on Hydrogen-Terminated Silicon(111) Surface Observed by Ultrahigh-Vacuum Atomic Force Microscopy
- Observation of Hydrogen-Terminated Silicon (111) Surface by Ultrahigh-Vacuum Atomic Force Microscopy
- Highly Localized Light Field on Metallic Nanoarrays Prepared with DNA Nanofibers
- Investigation of the Peptide Conformation by Measuring Force Curve using AFM
- Proposal of Near-Infrared Laser Diode Spectroscopy at 1.74μm for HCl Monitor in Semiconductor Processes
- Real-Time Observation of (1×1)-(7×7) Phase Transition on Vicinal Si(111) Surfaces by Scanning Tunneling Microscopy
- Behaviors of surfactant atoms on Si(001) surface
- Abrupt Si/Ge/Si(001) Interfaces Fabricated with Bi as a Surfactant
- Which Surfactant Shall We Choose for the Heteroepitaxy of Ge/Si(001)? : Bi as a Surfactant with Small Self-Incorporation
- Ultrafast Photoconductive Switches with a 43 nm Gap Fabricated Using an Atomic Force Microscope
- Ultrafast Photoconductive Switches with a 43nm Gap Fabricated by an Atomic Force Microscope
- Room Temperature Coulomb Diamond Characteristic of Single Electron Transistor Made by AFM Nano-Oxidation Process
- Experimental and Simulated Results of Room Temperature Single Electron Transistor Formed by Atomic Force Microscopy Nano-Oxidation Process
- Metal-Based Room-Temperature Operating Single Electron Devices Using Scanning Probe Oxidation
- Room Temperature Coulomb Oscillation for Single Electron Transistor on Atomically Flat Ti/α-Al_2O_3 Substrate Made by Pulse-Mode AFM Nano-Oxidation Process
- Single Electron Transistor on Atomically Flat α-Al_2O_3 Substrate Made by AFM Nano-Oxidation Process
- Piezoelectric Resonance Characteristics of SrBi_2Nb_2O_9-based Ceramics
- Fine-Tolerance Resonator Applications of Bismuth-Layer-Structured Ferroelectric Ceramics
- Temperature Dependence of Piezoelectric Properties of Grain-Oriented CaBi_4Ti_4O_ Ceramics
- Energy Trapping Characteristics of Bismuth Layer Structured Compound CaBi_4Ti_4O_
- Temperature Characteristics of (Ba_Sr_x)_2NaNb_5O_ Ceramics
- Pulsed Arc Electrohydraulic Discharges for Water Purification
- InGaAs/InGaAsP Quantum Well Laser at 2.04 μm for Diode Spectroscopy of Carbon Dioxide Isotope : Optics and Quantum Electronics
- Growth of Ga_In_N_yAs_ Single Quantum Wells on InP(100)Substrate by Metalorganic Chemical Vapor Deposition
- Improvement of Characteristic Temperature in In_Ga_As/InGaAsP Multiple Quantum Well Laser Operating at 1.74 μm for Laser Monitor
- Hydrogen Chloride Gas Monitoring at 1.74 μm with InGaAs/InGaAsP
- Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface
- Room Temperature Nb-Based Single-Electron Transistors
- Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface
- Room Temperature Nb-Based Single-Electron Transistors
- Single-Electron Transistors (SETs) with Nb/Nb Oxide System Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process
- 1.95-μm-wavelength InGaAs/InGaAsP Laser with Compressively Strained Quantum Well Active Layer
- Nb/Nb Oxide-based Planar-Type Metal/Insulator/Metal (MIM) Diodes Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process
- Relationship between Crosstalk and Readout Magnetic Field Direction on Trilayer Magnetically-Induced Super Resolution Media
- Spatially Controlled Formation of an Atomically Flat Si(001) Surface by Annealing with a Direct Current in an Ultrahigh Vacuum
- Properties of the Elastic Anomaly in SrBi_2Nb_20_9-based Ceramics
- Edge Roughness Study of Chemically Amplified Resist in Low-Energy Electron-Beam Lithography Using Computer Simulation
- Piezoelectric Characterization of Low-Temperature-Fired Pb(Zr, Ti)O_3-Pb(Ni, Nb)O_3 Ceramics
- Study of Valence State of the Manganese Ions in PbTiO_3 Ceramics by Means of ESR
- Contamination Charging up Effect in a Variably Shaped Electron Beam Writer
- Spatially Controlled Formation of Atomically Flat Si(001) Surface by Annealing with a Direct Current in UHV
- Surface Observation and Modification of Si Substrate in NH_4F and H_2SO_4 Solutions
- Electron Beam Calibration Method for Character Projection Exposure System EX-8D
- Surface Observation and Modification of Si Substrate in Solutions
- Electrochemical Scanning Tunneling Microscopy and Atomic Force Microscopy Observationson Si(111) in Several Solutions
- Patterning Accuracy Estimation of Electron Beam Direct-Writing System EX-8D
- Application of STM Nanometer-Size Oxidation Process to Planar-Type MIM Diode
- Very High-Density Recording on Exchange-Coupled Trilayer Magnetically Induced Super Resolution Media without Special Initializing Magnet
- Novel Evaluation Method of the Complex Dielectric Constant of High-Permittivity Material at Microwave Frequency
- Optimization of the piezoresistive AFM cantilever design for using at cryogenic temperature
- pnp-Type GaAs Inversion-Base Bipolar Transistor (pnp-type GaAs IBT)
- Integration of a GaAs SISFET and GaAs Inversion-Base Bipolar Transistor : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
- Atomic Structure of Hydrogen-Terminated Si(111) Surfaces by Hydrofluoric Acid Treatments
- Hybrid Laser Activation of Highly Concentrated Bi Donors in Wire-δ-Doped Silicon
- Single Electron Memory at Romm Temperature: Experiment and Simulation
- Characteristics of the Electrohydrodynamic (EHD) Pump Working with an Electrostriction Force
- Two-Dimensional Electron Gas in an n^+-GaAs/Undoped AlGaAs/Undoped GaAs SIS Structure
- Growth and Development of the Smith's Red-backed Vole, Eothenomys smithi
- Observation of Direct Band Gap Properties in Ge_nSi_m Strained-Layer Superlattices
- Preparation of Polycrystalline Bismuth and Aluminum Substituted Yttrium-Iron Garnet Films by Repetitive Gel Coating on Glass Substrates
- Displacement Characteristics of Series-Type Bimorph Actuator under High Applied Voltage : Piezoelectrics
- Emission Properties from Carbon Nanotube Field Emitter Arrays (FEAS) Grown on Si Emitters : Surfaces. Interfaces, and Films
- Hot-Pressed BN-AIN Ceramic Composites with High Thermal Conductivity-Part II
- Finite Element Analysis of Energy-Trapped Second Harmonic Thickness Extensional Vibration : Ultrasonic Transduction
- Single-Electron Transistor with Ultra-High Coulomb Energy of 5000K Using Position Controlled Grown Carbon Nanotube as Channel
- High Temperature Stable W-GaAs Schottky Barrier
- Submicron-Length Tungsten-Gate Self-Aligned GaAs FET
- Piezoelectric Properties of Ba and Ca Doped SrBi_2Nb_2O_9 Based Ceramic Materials
- Stacked Optical Disk Drive for Multimedia Files : Drive Technology
- Stacked Optical Disk Drive for Multimedia Files
- Monolithic Bimorph with Internal Electrodes : General Acoustics
- Effects of Whole Ingot Annealing on 1.49 eV PL Properties in LEC-Grown Semi-Insulating GaAs
- Computer-Controlled Mapping of Photoluminescence Intensities
- Low-Energy Electron Energy Loss Spectroscopy on Bi_2Sr_2Ca_Cu_nO_ (n=1,2)
- Magnetic Properties of Sodium-Modified Iron-Oxide Powders Synthesized by Sol-Gel Method
- Low-Energy Electron Energy Loss Spectroscopy on YBa_2Cu_3O_ : Surfaces, Interfaces and Films
- Characterization of Polyvinylchloride by Means of Sound Velocity and Longitudinal Modulus Measurements
- GaAs Inversion-Base Bipolar Transistor (GaAs IBT) with Graded Emitter Barrier : Semiconductors and Semiconductor Devices
- Energy Trapping Characteristics for Thickness Extensional Vibration of Preferentially Orientated ZnO Ceramics
- Leakage Current Distribution of Cu-Contaminated Thin SiO2