Ultrafast Photoconductive Switches with a 43nm Gap Fabricated by an Atomic Force Microscope
スポンサーリンク
概要
- 論文の詳細を見る
- 1996-08-26
著者
-
NAKAGAWA Tadashi
Electrotechnical Laboratory
-
Sugiyama Y
Fujitsu Laboratories Ltd.
-
ITATANI Taro
Electrotechnical Laboratory (ETL)
-
Kotaki Y
Nagaoka University Of Technology
-
Kotaki Yuichi
School Of Fisheries Sciences Kitasato University
-
Matsumoto K
Nippon Sanso Corp. Ibaraki Jpn
-
Matsumoto K
Electrotechnical Lab. Ibaraki‐kenn Jpn
-
Matsumoto Kazuhiko
Electrotechnical Laboratory (etl)
-
Matsumoto Kazuhiko
Advanced Industrial Science And Technology:tsukuba University:crest
-
SUGIYAMA Yoshinobu
Electrotechnical Laboratory
-
Kotaki Yuichi
Nagaoka University Of Technology
-
UCHIKI Hisao
Nagaoka University of Technology
-
Nakagawa Tadashi
Electroinformatics Group Nanoelectronics Research Institute National Institute Of Advanced Industria
-
Matsumoto Kazuhiko
Electrotechnical Laboratory (elt)
-
Matsumoto Kazuhisa
Sumitomo Electric Industries Ltd.
-
Segawa Yusaburo
Photodynamics Research Center Riken (institute Of Physical And Chemical Research)
-
Nakagawa T
Electrotechnical Laboratory
-
Nakagawa T
Matsushita Electric Industrial Co. Ltd. Kyoto Jpn
-
Nakagawa T
Electroinformatics Group Nanoelectronics Research Institute National Institute Of Advanced Industria
-
Matsumoto K
Advanced Industrial Science And Technology:tsukuba University:crest
-
Sugiyama Yoshinobu
Fujitsu Laboratories Ltd.
-
Itatani T
Electrotechnical Laboratory (etl)
-
Itatani Taro
Electrotechnical Laboratory
-
Matsumoto Kazuhiko
Electrotechnical Laboratory
関連論文
- Phonon Assisted Tunneling and P/V-Ratio in a Magnetic Confined Quasi 0D InGaAs/InAlAs Resonant Tunneling Diode
- InAs Self-Assembled Quantum Dots Coupled with GaSb Monolayer Quantum Well
- Effect of Size Fluctuations on the Photoluminescence Spectral Linewidth of Closely Stacked InAs Self-Assembled Quantum Dot Structures
- Narrow Photoluminescemce Line Width of Closely Stacked InAs Self-Assembled Quantum Dot Structures
- Self-Formed InGaAs Quantum Dot Lasers with Multi-Stacked Dot Layer
- New Optical Memory Structure Using Self-Assembled InAs Quantum Dots
- Time-Resolved Study of Carrier Transfer among InAs/GaAs Multi-Coupled Quantum Dots
- Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
- InAs/GaAs Multi-Coupled Quantum Dots Structure Enabling High-Intensity, Near-1.3-μm Emission due to Cascade Carrier Tunneling
- Phonon Assisted Tunneling and Peak-to-Valley Ratio in a Magnetically Confined Quasi Zero Dimensional InGaAs/InAlAs Resonant Tunneling Diode
- InGaAs/GaAs Tetrahedral-Shaped Recess Quantum Dot (TSR-QD)Technology (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
- Novel InGaAs/GaAs Quantum Dot Structures Formed in Tetrahedral-Shaped Recesses on (111) B GaAs Substrate Using Metalorganic Vapor Phase Epitaxy
- Occurrence of domoic acid in tropical bivalves
- Screening of diatoms producing domoic acid and its derivatives in the Philippines
- New stage of the study on domoic acid-producing diatoms : A finding of Nitzschia navis-varingica that produces domoic acid derivatives as major toxin components
- Wide distribution of Nitzschia navis-varingica, a new domoic acid-producing benthic diatom found in Vietnam
- All-Solid-State, THz Radiation Source Using a Saturable Bragg Reflector in a Femtosecond Mode-Locked Laser
- Ultraviolet picosecond pulses from an all-solid-state Ce : LiSAF master oscillator and Ce : LiCAF power amplifier system
- GaAs Pseudo-Heterojunction Bipolar Transistor with a Heavily Carbon-Doped Base
- Characterization of Column III Vacancies in Al_xGa_As/GaAs Heterostructures Grown by Molecular Beam Epitaxy through Slow Positrons
- Ultrafast Metal-Semiconductor-Metal Photoconductive Switches Fabricated Using an Atomic Force Microscope
- Surface Modification of Niobium (Nb) by Atomic Force Microscope (AFM) Nano-Oxidation Process
- Fabrication and Characterization of Nb/Nb Oxides-Based Single Electron Transistors (SETs)
- Side Gate Single Electron Transistor with Multi-Islands Structure Operated at Room Temperature Made by STM/AFM Nano-Oxidation Process
- Room Temperature Operation of Single Electron Transistor Made by STM Nano-Oxidation Process
- V-Shaped Gate High Electron Mobility Transistor (VHEMT)
- Accumulation-Mode GaAlAs/GaAs Bipolar Transistor
- Near-1.3-μm High-Intensity Photoluminescence at Room Temperature by InAs/GaAs Multi-Coupled Quantum Dots
- Differences in Tunneling Time between 77 K and Room Temperature for Tunneling Biquantum Wells
- Fast Recovery from Excitonic Absorption Bleaching in Type-II : GaAs/AlGaAs/AlAs Tunneling Biquantum Well
- Quantum Well Width Dependence of Negative Differential Resistance of In_Al_As/In_Ga_As Resonant Tunneling Barriers Grown by MBE
- Extremely High 2DEG Concentration in Selectively Doped In_Ga_As/N-In_Al_As Heterostructures Grown by MBE
- Conduction Band Edge Discontinuity of In_Ga_As/In_(Ga_1 _xAl_x)_As(0≦x≦1) Heterostructures
- MBE Growth of InGaAlAs Lattice-Matched to InP by Pulsed Molecular Beam Method
- MBE Growth of High-Quality GaAs Using Triethylgallium as a Gallium Source
- Proposal of Near-Infrared Laser Diode Spectroscopy at 1.74μm for HCl Monitor in Semiconductor Processes
- Effects of As_2 Flux and Atomic Hydrogen Irradiation for Growth of InGaAs Quantum Wires by Molecular Beam Epitaxy
- THz-radiation Generation from an Intracavity Saturable Bragg Reflector in a Magnetic Field
- Effects of As_2 Flux and Atomic Hydrogen Irradiation for Growth of InGaAs Quantum Wires by Molecular Beam Epitaxy
- Difference in Diffusion Length of Ga Atoms under As_2 and As_4 Flux in Molecular Beam Epitaxy
- Ultrafast Photoconductive Switches with a 43 nm Gap Fabricated Using an Atomic Force Microscope
- Fabrication of Quantum Wire Structures on Non-Planer InP Substrates by Molecular Beam Epitaxy (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- Ultrafast Photoconductive Switches with a 43nm Gap Fabricated by an Atomic Force Microscope
- Electrooptic Vector Sampling : Measurement of Vector Components of Electric Field by the Polarization Control of Probe Light
- Optimization of the Body Bias Voltage Set (BBVS) for Flex Power FPGA(Reconfigurable Device and Design Tools,Reconfigurable Systems)
- Preliminary Evaluation of Flex Power FPGA : A Power Reconfigurable Architecture with Fine Granularity(Recornfigurable Systems)(Reconfigurable Systems)
- Formation of Very Thin Anodic Oxide of InSb
- Resonant Tunneling in Triple Barrier Diode under Pressure
- Raman Scattering Study on Unoxidized Antimony in Anodic Oxide-Films of InSb
- Resonant Magnetotunneling in AlGaAs/GaAs Triple Barrier Diodes : II. LOW TEMPERATURE PROPERTIES OF SOLIDS : Two Dimensional Electrons and Ions
- Miniband Base Transistor
- Sharp Resonance Characteristics in Triple-Barrier Diodes with a Thin Undoped Spacer Layer
- Phase-Locked Epitaxy Using RHEED Intensity Oscillation
- Room Temperature Coulomb Diamond Characteristic of Single Electron Transistor Made by AFM Nano-Oxidation Process
- Experimental and Simulated Results of Room Temperature Single Electron Transistor Formed by Atomic Force Microscopy Nano-Oxidation Process
- Metal-Based Room-Temperature Operating Single Electron Devices Using Scanning Probe Oxidation
- Room Temperature Coulomb Oscillation for Single Electron Transistor on Atomically Flat Ti/α-Al_2O_3 Substrate Made by Pulse-Mode AFM Nano-Oxidation Process
- Single Electron Transistor on Atomically Flat α-Al_2O_3 Substrate Made by AFM Nano-Oxidation Process
- Annealing Behavior of Irradiation-Induced Damagein an AlGaAs/GaAs Heterostructure by Low-Ertergy Electron Beam
- InGaAs/InGaAsP Quantum Well Laser at 2.04 μm for Diode Spectroscopy of Carbon Dioxide Isotope : Optics and Quantum Electronics
- Growth of Ga_In_N_yAs_ Single Quantum Wells on InP(100)Substrate by Metalorganic Chemical Vapor Deposition
- Improvement of Characteristic Temperature in In_Ga_As/InGaAsP Multiple Quantum Well Laser Operating at 1.74 μm for Laser Monitor
- Hydrogen Chloride Gas Monitoring at 1.74 μm with InGaAs/InGaAsP
- Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface
- Room Temperature Nb-Based Single-Electron Transistors
- Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface
- Room Temperature Nb-Based Single-Electron Transistors
- Single-Electron Transistors (SETs) with Nb/Nb Oxide System Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process
- 1.95-μm-wavelength InGaAs/InGaAsP Laser with Compressively Strained Quantum Well Active Layer
- Nb/Nb Oxide-based Planar-Type Metal/Insulator/Metal (MIM) Diodes Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process
- Relationship between Crosstalk and Readout Magnetic Field Direction on Trilayer Magnetically-Induced Super Resolution Media
- Spatially Controlled Formation of an Atomically Flat Si(001) Surface by Annealing with a Direct Current in an Ultrahigh Vacuum
- Spatially Controlled Formation of Atomically Flat Si(001) Surface by Annealing with a Direct Current in UHV
- Surface Observation and Modification of Si Substrate in NH_4F and H_2SO_4 Solutions
- Surface Observation and Modification of Si Substrate in Solutions
- Electrochemical Scanning Tunneling Microscopy and Atomic Force Microscopy Observationson Si(111) in Several Solutions
- Application of STM Nanometer-Size Oxidation Process to Planar-Type MIM Diode
- Very High-Density Recording on Exchange-Coupled Trilayer Magnetically Induced Super Resolution Media without Special Initializing Magnet
- pnp-Type GaAs Inversion-Base Bipolar Transistor (pnp-type GaAs IBT)
- Integration of a GaAs SISFET and GaAs Inversion-Base Bipolar Transistor : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
- Effects of Electron Irradiation on Two-Dimensional Electron Gas in AlGaAs/GaAs Heterostructure
- Self-Aligned Inversion-Mode lnP MISFET
- InP PN Junction Waveguide Made by Mg-Ion Implantation
- Single Electron Memory at Romm Temperature: Experiment and Simulation
- Two-Dimensional Electron Gas in an n^+-GaAs/Undoped AlGaAs/Undoped GaAs SIS Structure
- Preparation of Polycrystalline Bismuth and Aluminum Substituted Yttrium-Iron Garnet Films by Repetitive Gel Coating on Glass Substrates
- Emission Properties from Carbon Nanotube Field Emitter Arrays (FEAS) Grown on Si Emitters : Surfaces. Interfaces, and Films
- Single-Electron Transistor with Ultra-High Coulomb Energy of 5000K Using Position Controlled Grown Carbon Nanotube as Channel
- High Temperature Stable W-GaAs Schottky Barrier
- Presence of Free D-Amino Acids in Microalgae(Organic Chemistry)
- Submicron-Length Tungsten-Gate Self-Aligned GaAs FET
- Stacked Optical Disk Drive for Multimedia Files : Drive Technology
- Stacked Optical Disk Drive for Multimedia Files
- Effects of Whole Ingot Annealing on 1.49 eV PL Properties in LEC-Grown Semi-Insulating GaAs
- Computer-Controlled Mapping of Photoluminescence Intensities
- Possible occurrence of intracellular bacteria in Pseudonitzschia multiseries, a causative diatom of amnesic shellfish poisoning
- Magnetic Properties of Sodium-Modified Iron-Oxide Powders Synthesized by Sol-Gel Method
- Characterization of Polyvinylchloride by Means of Sound Velocity and Longitudinal Modulus Measurements
- GaAs Inversion-Base Bipolar Transistor (GaAs IBT) with Graded Emitter Barrier : Semiconductors and Semiconductor Devices