Effects of Whole Ingot Annealing on 1.49 eV PL Properties in LEC-Grown Semi-Insulating GaAs
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概要
- 論文の詳細を見る
The effects of whole ingot annealing on 1.49 eV photoluminescence (PL) properties at 4.2 K in undoped/low-Cr doped LEC-grown semi-insulating GaAs have been studied. It has been found that whole ingot annealing considerably increases the PL intensities with no significant degradation of semi-insulating properties. It has been also found that whole ingot annealing drastically reduces both the radial variation of PL intensity distribution and the difference of PL intensities between seed end and tail end.
- 社団法人応用物理学会の論文
- 1984-05-20
著者
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Matsumoto K
Electrotechnical Lab. Ibaraki‐kenn Jpn
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Matsumoto Kazuhiko
Electrotechnical Laboratory (etl)
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Matsumoto Kazuhisa
Sumitomo Electric Industries Ltd.
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Nishine Shiro
Sumitomo Electric Industries Ltd.
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Akai Shin-ichi
Sumitomo Electric Industries Ltd.
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YOKOGAWA Masamichi
Sumitomo Electric Industries, Ltd.
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SASAKI Masami
Sumitomo Electric Industries, Ltd.
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FUJITA Keiichiro
Sumitomo Electric Industries, Ltd.
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Fujita Keiichiro
Sumitomo Electric Industries Ltd.
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Yokogawa Masamichi
Sumitomo Electric Industries Ltd.
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Sasaki Masami
Sumitomo Electric Industries Ltd.
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