Formation of Very Thin Anodic Oxide of InSb
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1983-08-20
著者
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NAKAGAWA Tadashi
Electrotechnical Laboratory
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Nakagawa Tadashi
Electroinformatics Group Nanoelectronics Research Institute National Institute Of Advanced Industria
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FUJISADA Hiroyuki
Electrotechnical Laboratory
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SASASE Takafumi
Hamamatsu Photonics KK
関連論文
- Phonon Assisted Tunneling and P/V-Ratio in a Magnetic Confined Quasi 0D InGaAs/InAlAs Resonant Tunneling Diode
- Phonon Assisted Tunneling and Peak-to-Valley Ratio in a Magnetically Confined Quasi Zero Dimensional InGaAs/InAlAs Resonant Tunneling Diode
- All-Solid-State, THz Radiation Source Using a Saturable Bragg Reflector in a Femtosecond Mode-Locked Laser
- Characterization of Column III Vacancies in Al_xGa_As/GaAs Heterostructures Grown by Molecular Beam Epitaxy through Slow Positrons
- Ultrafast Metal-Semiconductor-Metal Photoconductive Switches Fabricated Using an Atomic Force Microscope
- Effects of As_2 Flux and Atomic Hydrogen Irradiation for Growth of InGaAs Quantum Wires by Molecular Beam Epitaxy
- THz-radiation Generation from an Intracavity Saturable Bragg Reflector in a Magnetic Field
- Effects of As_2 Flux and Atomic Hydrogen Irradiation for Growth of InGaAs Quantum Wires by Molecular Beam Epitaxy
- Difference in Diffusion Length of Ga Atoms under As_2 and As_4 Flux in Molecular Beam Epitaxy
- Ultrafast Photoconductive Switches with a 43 nm Gap Fabricated Using an Atomic Force Microscope
- Fabrication of Quantum Wire Structures on Non-Planer InP Substrates by Molecular Beam Epitaxy (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- Ultrafast Photoconductive Switches with a 43nm Gap Fabricated by an Atomic Force Microscope
- Electrooptic Vector Sampling : Measurement of Vector Components of Electric Field by the Polarization Control of Probe Light
- Optimization of the Body Bias Voltage Set (BBVS) for Flex Power FPGA(Reconfigurable Device and Design Tools,Reconfigurable Systems)
- Preliminary Evaluation of Flex Power FPGA : A Power Reconfigurable Architecture with Fine Granularity(Recornfigurable Systems)(Reconfigurable Systems)
- Formation of Very Thin Anodic Oxide of InSb
- Resonant Tunneling in Triple Barrier Diode under Pressure
- Raman Scattering Study on Unoxidized Antimony in Anodic Oxide-Films of InSb
- Resonant Magnetotunneling in AlGaAs/GaAs Triple Barrier Diodes : II. LOW TEMPERATURE PROPERTIES OF SOLIDS : Two Dimensional Electrons and Ions
- Miniband Base Transistor
- Sharp Resonance Characteristics in Triple-Barrier Diodes with a Thin Undoped Spacer Layer
- Phase-Locked Epitaxy Using RHEED Intensity Oscillation
- Radiometric Calibration of ASTER Data
- Deep Levels in n-Type Undoped and Te-doped InSb Crystals
- Evaluation of InSb MOS Structure with Thin Anodic Oxide
- Effects of Insulated Gate on Ion Implanted InSb p^+n Junctions
- Planar Type p-Channel InSb-MAOSFET
- High Frequency Transport Properties in InSb under a Magnetic Field
- Temperature Dependence of Reverse Current in Be Ion Implanted InSb p^+n Junctions
- Hot Electrons in InSb under a Transverse Magnetic Field at 77°K
- InSb-MAOS Structure Fabricated by Anodization and Sputtering
- High-Frequency Precise Characterization of Intrinsic FinFET Channel
- A 0.7-V Opamp in Scaled Low-Standby-Power FinFET Technology
- Ultrafast Metal-Semiconductor-Metal Photoconductive Switches Fabricated Using an Atomic Force Microscope
- Difference in Diffusion Length of Ga Atoms under As2 and As4 Flux in Molecular Beam Epitaxy
- Galvanomagnetic Properties in Inhomogeneous Indium Antimonide at 77°K