Galvanomagnetic Properties in Inhomogeneous Indium Antimonide at 77°K

概要

論文の詳細を見る
The effective magnetoresistance and Hall effects in inhomogeneous semiconductors with high carrier mobility have been calculated by using a stratified medium model. The theory shows that the effective magnetoresistance consists of two contributions, one proportional to $\sin^{2}\varphi$ and the other with sharp dependence on $\varphi$, $\varphi$ being the angle between the magnetic field and the current, and that the Hall effect is the same as in a homogeneous medium. The $\sin^{2}\varphi$ dependence is mainly due to the physical magnetoresistance and the sharp one due to the stratified inhomogeneities in electron concentration. Experiments were made with high purity $n$-type InSb at 77°K under magnetic fields up to 1.5 weber/m2, showing a good agreement with the theory. It is concluded that the measured values of the magnetoresistance in high purity $n$-type InSb specimens at 77°K can be explained by considering the influence of stratified inhomogeneities in electron concentration, in addition to the physical magnetoresistance.
Physical Society of Japanの論文
1968-01-05