Temperature Dependence of Reverse Current in Be Ion Implanted InSb p^+n Junctions
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概要
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Temperature dependence of the reverse current in Be ion implanted InSb p^+n junctions is studied. Results indicate that the generation-recombination is a dominant mechanism for the reverse current in metallurgical junctions. A combination of tunneling and thermal excitation via surface states is proposed as a surface conduction mechanism in field induced junctions.
- 社団法人応用物理学会の論文
- 1985-02-20
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