High Frequency Transport Properties in InSb under a Magnetic Field

概要

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Theoretical calculation has been made on high-frequency transport properties of InSb under a d.c. magnetic field, leading to the conclusion that the relative increase of microwave loss in InSb under a magnetic field, γ_l, is given by γ_0{1+ω(τ_e+τ_h)}, where γ_0 is the relative resistivity increase Δρ/ρ_0 under a d.c. magnetic field with d.c. current, and τ_e and τ_h are the constant relaxation times for electrons and holes respectively. Measurements were made on the microwave power loss at 34 Gc/s at room temperature under magnetic fields up to 1.5 weber/m^2. Tbe experimental results show an appreciable influence of ωτ on the loss even at room temperature as predicted by the theory.
社団法人日本物理学会の論文
1966-03-05