Electron Velocity-Field Characteristics of Ga_xIn_<1-x>Sb Measured by a Microwave Heating Technique

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The electron velocity-field (υ-E) characteristics of Ga_xIn_<1-x>Sb in the composition range 0.4【<|_】x【<|_】0.9 are measured by a microwave heating technique at 35 GHz at room temperature, to study the transferred electron effect at high frequency.New microwave cavity perturbation tecqnique is developed to measure a small signal conductance against the absorbed power in order to obtain the υ-E curve.The results indicated that all samples except one of x=0.4, show negative differential mobility characteristics above the threshold field.The threshold field increases from 430 V/cm to 1200 V/cm and the negative mobility decreases with increasing x.For x=0.4, an impact ionization prevents from mesuring a negative differntial conductivity.These results suggest that a useful Ga composition range of x for transferred electron devices is between 0.55 and 0.82, and that the response time of hot electrons is not much different from that in GaAs.
社団法人応用物理学会の論文
1979-07-05