RHEED Patterns and Surface Morphology of ZnSe Homoepitaxial Films Grown by MBE

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概要

• 論文の詳細を見る

• Homoepitaxial films of ZnSe have been grown on (001)ZnSe substrates by molecular-beam epitaxy(MBE). These films were grown at a constant substrate temperature of 360°C. The Zn-beam pressure ($P_{\text{Zn}}$) was fixed, while the Se-beam pressure ($P_{\text{Se}}$) was varied. The surfaces during the growth were observed by reflection high-energy electron diffraction (RHEED). The grown film observed with a scanning electron microscope showed the smoothest surface for $P_{\text{Se}}/P_{\text{Zn}}{=}1.1$, which makes the surface a c($2\times 2$) surface structure. This suggests that the surface stoichiometry condition does not necessarily provide a smooth surface.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1989-09-20

著者

• Kawashima Mitsuo

  Electronics Materials Laboratory Sumitomo Metal Mining Co Ltd.

• Menda Kazunori

  Electronics Materials Laboratory Sumitomo Metal Mining Co. Ltd.

• MINATO Tetsuo

  Electronics Materials Laboratory, Sumitomo Metal Mining Co., Ltd.

• Minato Tetsuo

  Electronics Materials Laboratory, Sumitomo Metal Mining Co., Ltd., 1-6-1 Suehiro-cho Ohme-shi, Tokyo 198

関連論文

• ARXPS Analysis on As-Passivated GaAs Surfaces by HF Dipping Method
• Liquid Phase Epitaxial Growth of Ga_x In_ Sb by Vertical Dipping Method
• Behavior of High Field Domain in n-Ga_xIn_Sb
• RHEED Observation on (001) ZnSe Surface : MBE Surface Phase Diagram and Kinetic Behavior of Zn And Se Adatoms
• Electron Velocity-Field Characteristics of Ga_xIn_Sb Measured by a Microwave Heating Technique
• Large Signal Monte Carlo Simulation of Electron Transport in Ga_xIn_Sb
• Ion Beam Analysis of ZnSe
• RHEED Patterns and Surface Morphology of ZnSe Homoepitaxial Films Grown by MBE

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