ARXPS Analysis on As-Passivated GaAs Surfaces by HF Dipping Method

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概要

• 論文の詳細を見る

• Undoped (001)GaAs surfaces have been analyzed with angular-resolve X-ray photoemission spectroscopy (ARXPS). The ARXPS analysis was performed on the GaAs surfaces which had been exposed to air for about 3 weeks after chemical etching or HF dipping. Both Ga_2O_3 and As_2O_3 signals were detected on the etched surface, whereas the Ga_2O_3 signal was not detected on the HF-dipped surface. This implies that the HF-dipped surface can be cleaned in vacuum by a thermal treatment at 〜500℃.

• 社団法人応用物理学会の論文
• 1990-03-20

著者

• Kanda Eizaburo

  Electronics Materials Laboratory Sumitomo Metal Mining Co. Ltd.

• YOKOYAMA Takeshi

  Electronics Materials Laboratory, Sumitomo Metal Mining, Co., Ltd

• MENDA Kazunori

  Electronics Materials Laboratory, Sumitomo Metal Mining Co., Ltd.

• Menda K

  Electronics Materials Laboratory Sumitomo Metal Mining Co. Ltd.:(present Address) Research Departmen

• Menda Kazunori

  Electronics Materials Laboratory Sumitomo Metal Mining Co. Ltd.

• Yokoyama Takeshi

  Electronics Materials Laboratory Sumitomo Metal Mining Co. Ltd.

• Yokoyama Takeshi

  Electronics Materials Laboratory Sumitomo Metal Mining Co. Ltd

関連論文

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• ARXPS Analysis on As-Passivated GaAs Surfaces by HF Dipping Method
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• Fine Structure of a Deep Photolumineseence Band Related to Oxygen in LEC-GaAs
• RHEED Patterns and Surface Morphology of ZnSe Homoepitaxial Films Grown by MBE

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