Fine Structure of a Deep Photolumineseence Band Related to Oxygen in LEC-GaAs

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概要

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• A fine structure is discovered in a 0.63 eV photoluminescence emission band in GaAs at 4.2 K under the excitation of the 5145 A line of an Ar-laser. The fine structure is interpreted to be due to the phonon side-bands of the oxygen-related radiative transition. The emission band is stronger in both Ga_2O_3 doped LEC-GaAs and undoped LEC-GaAs grown using wet B_2O_3, as an encapsulant than in conventional undoped GaAs grown by dry B_2O_3 encapsulant. Nonlinear least squares fitting of the band gives 6.7 for Huang-Rhys coupling constant, 0.0237 eV for the coupled phonon energy and 0.16 eV for the Franck-Condon shift. Thermal energy of oxygen related level is evaluated as 0.74±0.02 eV below theconduction band.

• 社団法人応用物理学会の論文
• 1986-11-20

著者

• Sawada Yuji

  Electronics Materials Laboratory Sumitomo Metal Mining Co. Ltd.

• YOKOYAMA Takeshi

  Electronics Materials Laboratory, Sumitomo Metal Mining, Co., Ltd

• Kazuno Tadao

  Electronics Materials Laboratory Sumitomo Metal Mining Co. Ltd.

• Yokoyama Takeshi

  Electronics Materials Laboratory Sumitomo Metal Mining Co. Ltd

関連論文

• High Average Power Nd:Gd_3Ga_5O_ Slab Laser
• ARXPS Analysis on As-Passivated GaAs Surfaces by HF Dipping Method
• Fine Structure of a Deep Photolumineseence Band Related to Oxygen in LEC-GaAs

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