High Average Power Nd:Gd_3Ga_5O_<12> Slab Laser
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1987-10-20
著者
-
Ishikawa T
Riken Spring-8:jasri Spring-8
-
HAYAKAWA Hirohiko
Electronics Materials Laboratory, Sumitomo Metal Mining, Co., Ltd
-
MAEDA Kazuo
Electronics Materials Laboratory, Sumitomo Metal Mining, Co., Ltd
-
ISHIKAWA Toshiaki
Electronics Materials Laboratory, Sumitomo Metal Mining, Co., Ltd
-
YOKOYAMA Takeshi
Electronics Materials Laboratory, Sumitomo Metal Mining, Co., Ltd
-
FUJII Yoshimasa
Electronics Materials Laboratory, Sumitomo Metal Mining, Co., Ltd
-
Hayakawa Hirohiko
Electronics Materials Laboratory Sumitomo Metal Mining Co. Ltd
-
Fujii Yoshimasa
Electronics Materials Laboratory Sumitomo Metal Mining Co. Ltd
-
Ishikawa Toshiaki
Electronics Materials Laboratory Sumitomo Metal Mining Co. Ltd
-
Maeda Kazuo
Electronics Materials Laboratory Sumitomo Metal Mining Co. Ltd
-
Yokoyama Takeshi
Electronics Materials Laboratory Sumitomo Metal Mining Co. Ltd
関連論文
- Study on the Si(111) √×√ - Ag Surface Structure by X-Ray Diffraction : Surfaces, Interfaces and Films
- Study of 4p Electronic States Related to Magnetic Phase Transition in Mn_3MC (M=Zn and Ga) by X-ray Magnetic Circular Dichroism(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Helicity-Modulation Technique Using Diffractive Phase Retarder for Measurements of X-ray Magnetic Circular Dichroism
- Laue-Case Plane Wave Topography Using Synchrotron Radiation to Reveal Microdefects in a Thinned Silicon Crystal
- High Average Power Nd:Gd_3Ga_5O_ Slab Laser
- Observation of Microdefects in Thin Silicon Crystals by Means of Plane-Wave Topography Using Synchrotron X-Radiation
- Observation of Striations in Nd: YAG with Circularly Polarized Light
- ARXPS Analysis on As-Passivated GaAs Surfaces by HF Dipping Method
- Stress-Induced Quantum Ferroelectricity in SrTiO_3
- Electric Field Effect on ESR of Gd^ in SrTiO_3
- Fine Structure of a Deep Photolumineseence Band Related to Oxygen in LEC-GaAs
- A Periodic Layered Structure Laser Using an Electro-Luminescent Type Excitation
- Dielectric and Optical Properties of KTaO_3
- Concentration Dependence of Fluorescence Lifetime of Nd^-Doped Gd_3Ga_5O_ Lasers