Concentration Dependence of Fluorescence Lifetime of Nd^<3+>-Doped Gd_3Ga_5O_<12> Lasers
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概要
- 論文の詳細を見る
The Nd^<3+> concentration dependence of the fluorescence lifetime in laser crystal Gd_3Ga_5O_<12>(GGG) for high power and high efficiency solid state laser is reported for the first time. The dominant mechanism of the concentration quenching in Nd^<3+> : GGG rises from the electric dipole-dipole interaction between Nd^<3+> ions. The nonradiative transition probability of the ^4F_<3/2> state is found to be proportional to the Nd^<3+> concentration squared up to the Nd^<3+> concentration of 5×10^<20> cm^<-3>. The optimum Nd^<3+> concentration in Nd^<3+> : GGG is estimated to be (3.4±0.5)×10^<20> cm^<-3> in pulsed laser operation.
- 社団法人応用物理学会の論文
- 1984-10-20
著者
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Wada Naoki
Electronics Materials Laboratory Sumitomo Metal Mining Co. Ltd.
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Kuroda Hiroto
The Institute For Solid Stale Physics The University Of Tokyo
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Takada Yoichi
The Institute For Solid State Physics The University Of Tokyo
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Nakano Noboru
The Institute For Solid State Physics The University Of Tokyo
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Umino Masami
Electronics Materials Laboratory Sumitomo Metal Mining Co. Ltd
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Maeda Kazuo
Electronics Materials Laboratory Sumitomo Metal Mining Co. Ltd
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TAKADA Yoichi
The Institute for Solid State Physics, The University of Tokyo
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MAEDA Kazuo
Electronics Materials Laboratory, Sumitomo Metal Mining, CO., Ltd.
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ABE Mitsuaki
Electronics Materials Laboratory, Sumitomo Metal Mining, CO., Ltd.
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UMINO Masami
Electronics Materials Laboratory, Sumitomo Metal Mining, CO., Ltd.
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