RHEED Observation on (001) ZnSe Surface : MBE Surface Phase Diagram and Kinetic Behavior of Zn And Se Adatoms
スポンサーリンク
概要
- 論文の詳細を見る
Reflection high-energy electron diffraction (RHEED) studies have been performed on epitaxial (001)ZnSe surfaces. The phase diagram on the surface grown by molecular beam epitaxy (MBE) was obtained by observing changes of RHEED patterns as a function of beam flux ratio and substrate temperature. The desorption time of Se atoms and the adsorption time of Zn atoms were also obtained by measuring the time taken for the surface structure to change from a Se stabilized surface to a Zn-stabilized one. The activation energy for the desorption of Se atom from a Se-stabilized surface was 1.02 eV.
- 社団法人応用物理学会の論文
- 1987-08-20
著者
-
Kawashima Mitsuo
Electrotechnical Laboratory
-
Kawashima Mitsuo
Electronics Materials Laboratory Sumitomo Metal Mining Co. Ltd.
-
Kawashima Mitsuo
Electronics Materials Laboratory Sumitomo Metal Mining Co Ltd.
-
MENDA Kazunori
Electronics Materials Laboratory, Sumitomo Metal Mining Co., Ltd.
-
Menda Kazunori
Electronics Materials Laboratory Sumitomo Metal Mining Co. Ltd.
-
TAKAYASU Ichiro
Electronics Materials Laboratory, Sumitomo Metal Mining Co., Ltd.
-
MINATO Tetsuo
Electronics Materials Laboratory, Sumitomo Metal Mining Co., Ltd.
-
Takayasu Ichiro
Electronics Materials Laboratory Sumitomo Metal Mining Co. Ltd.
-
Minato T
Electronics Materials Laboratory Sumitomo Metal Mining Co. Ltd.
関連論文
- ARXPS Analysis on As-Passivated GaAs Surfaces by HF Dipping Method
- Liquid Phase Epitaxial Growth of Ga_x In_ Sb by Vertical Dipping Method
- Behavior of High Field Domain in n-Ga_xIn_Sb
- RHEED Observation on (001) ZnSe Surface : MBE Surface Phase Diagram and Kinetic Behavior of Zn And Se Adatoms
- Electron Velocity-Field Characteristics of Ga_xIn_Sb Measured by a Microwave Heating Technique
- Large Signal Monte Carlo Simulation of Electron Transport in Ga_xIn_Sb
- Ion Beam Analysis of ZnSe
- RHEED Patterns and Surface Morphology of ZnSe Homoepitaxial Films Grown by MBE