Behavior of High Field Domain in n-Ga_xIn_<1-x>Sb

概要

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High field domain characteristics in n-Ga_xIn_<1-x>Sb (0.4≤x≤0.82) were investigated by current-voltage and potential probing measurements. Domain velocity varies from 1×10^7cm/s for x=0.4 to 0.5×10^7cm/s for x=0.82 but remains constant irrespective of the applied voltage or the presence of avalanche breakdown in the domain. Domain formation time is estimated to be less than 70 ps for x=0.82, n=6×10^<15>cm^<-3> and l=400 μm long diode.
社団法人応用物理学会の論文
1980-03-05