Pinching Processes in Semiconductor Plasmas
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Adiabatic compression model for the linear pinch in avalanching n-InSb is studied experimentally. The pinching radial velocity and the final pinched radius are determined from the cross sectional dependence of the pinch time, and compared with the theory. Semiconductor plasma is heated up to a temperature just below the melting point according to the adiabatic compression in the low and intermediate sample axial current.
- 社団法人日本物理学会の論文
- 1970-11-05
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