Evaluation of InSb MOS Structure with Thin Anodic Oxide
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概要
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Interface and electrical properties of thin anodic oxide of inSb with a thickness of 330 Å are described. The thin anodic oxide has about one order of magnitude smaller interface state densitics than thick anodic oxide. Electrical insulation is excellent at 77 K and even at room temperature. A flat band voltage shift of C-V curve is small for the maximum fabrication process temperature of 120℃ and drastically increases even for annealing in H_2 gas at 200℃.
- 社団法人応用物理学会の論文
- 1984-01-20
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