Planar Type p-Channel InSb-MAOSFET
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概要
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Planar type p-channel InSb-MAOSFET is fabricated by anodic oxidation and alumina sputtering for MAOS gate structure, and Be ion implantation for source and drain. An excellent on-off ratio of the order of 10^5 is obtained in the drain current. Results also indicate that threshold voltage depends on various conditions of the application of gate and drain voltages and that a time dependent response is observed for the drain current.
- 社団法人応用物理学会の論文
- 1985-10-20
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関連論文
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