Effects of Insulated Gate on Ion Implanted InSb p^+n Junctions
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概要
- 論文の詳細を見る
Current-voltage characteristics for Be ion implanted InSb p^+n junctions with insulated gate fabricated by planar technology are studied. It has been demonstrated by field effects of the insulated gate that a large current can be originated from the surface of the p^+ region. Results also suggest that the insulated gate is a good way to improve properties of the p^+n junction and a low dose of 4.1×10^<12> cm^<-2> at 90 keV is enough for preparation of a good p^+n junction.
- 社団法人応用物理学会の論文
- 1984-03-20
著者
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FUJISADA Hiroyuki
Electrotechnical Laboratory
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SASASE Takafumi
Hamamatsu Photonics KK
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Sasase T
Hamamatsu Photonics Kk Hamamatsu
関連論文
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- Deep Levels in n-Type Undoped and Te-doped InSb Crystals
- Evaluation of InSb MOS Structure with Thin Anodic Oxide
- Effects of Insulated Gate on Ion Implanted InSb p^+n Junctions
- Planar Type p-Channel InSb-MAOSFET
- High Frequency Transport Properties in InSb under a Magnetic Field
- Temperature Dependence of Reverse Current in Be Ion Implanted InSb p^+n Junctions
- Hot Electrons in InSb under a Transverse Magnetic Field at 77°K
- InSb-MAOS Structure Fabricated by Anodization and Sputtering
- Galvanomagnetic Properties in Inhomogeneous Indium Antimonide at 77°K