InSb-MAOS Structure Fabricated by Anodization and Sputtering

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概要

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• A InSb-MAOS structure is fabricated by anodic oxidation and alumina sputtering. Effects of the thickness of the anodic oxide and thermal annealing on interface properties are described. The anodic oxide is not only an excellent gate insulator but also plays a buffer role in alumina sputtering. A thickness of 34 nm is minimum to avoid the sputtering damage. Any thermal annealing gives rise to a deterioration of interface properties, even at a low temperature of around 100℃. The InSb-MAOS structure fabricated with a low temperature process condition below 100℃ shows stable C-V characteristics with small flat band voltage shift and low interface state densities.

• 社団法人応用物理学会の論文
• 1987-07-20

著者

• FUJISADA Hiroyuki

  Electrotechnical Laboratory

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