Difference in Diffusion Length of Ga Atoms under As_2 and As_4 Flux in Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-09-15
著者
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NAKAGAWA Tadashi
Electrotechnical Laboratory
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Sugiyama Y
Fujitsu Laboratories Ltd.
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SUGAYA Takeyoshi
Electrotechnical Laboratory (ETL)
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SUGIYAMA Yoshinobu
Electrotechnical Laboratory
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Nakagawa Tadashi
Electroinformatics Group Nanoelectronics Research Institute National Institute Of Advanced Industria
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Segawa Yusaburo
Photodynamics Research Center Riken (institute Of Physical And Chemical Research)
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Nakagawa T
Electrotechnical Laboratory
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Nakagawa T
Matsushita Electric Industrial Co. Ltd. Kyoto Jpn
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Nakagawa T
Electroinformatics Group Nanoelectronics Research Institute National Institute Of Advanced Industria
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TANUMA Yasuhiko
Shibaura Institute of Technology
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YONEI Kenji
Shibaura Institute of Technology
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Sugiyama Yoshinobu
Fujitsu Laboratories Ltd.
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Yonei K
Shibaura Inst. Technol. Tokyo Jpn
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Sugaya Takeyoshi
Electrotechnical Laboratory
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