YONEI Kenji | Shibaura Institute of Technology
スポンサーリンク
概要
関連著者
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YONEI Kenji
Shibaura Institute of Technology
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YAMAUCHI Hiromi
National Institute of Advanced Industrial Science and Technology
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OGURA Mutsuo
National Institute of Advanced Industrial Science and Technology
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TAKASUKA Yasuyuki
National Institute of Advanced Industrial Science and Technology (AIST)
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SUGIYAMA Yoshinobu
Electrotechnical Laboratory
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Nakagawa Tadashi
Electroinformatics Group Nanoelectronics Research Institute National Institute Of Advanced Industria
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TANUMA Yasuhiko
Shibaura Institute of Technology
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Sugaya Takeyoshi
Electrotechnical Laboratory
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NAKAGAWA Tadashi
Electrotechnical Laboratory
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Sugiyama Y
Fujitsu Laboratories Ltd.
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SUGAYA Takeyoshi
Electrotechnical Laboratory (ETL)
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Segawa Yusaburo
Photodynamics Research Center Riken (institute Of Physical And Chemical Research)
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Nakagawa T
Electrotechnical Laboratory
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Nakagawa T
Matsushita Electric Industrial Co. Ltd. Kyoto Jpn
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Nakagawa T
Electroinformatics Group Nanoelectronics Research Institute National Institute Of Advanced Industria
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Sugiyama Yoshinobu
Fujitsu Laboratories Ltd.
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Yonei K
Shibaura Inst. Technol. Tokyo Jpn
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Yamauchi Hiroshi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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SEKIGUCHI Takashi
Institute for Materials Research, Tohoku University
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Sekiguchi Takashi
Department Of Physics Faculty Of Science Tohoku University:the Research Institute For Iron Steel And
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TSUJI Yasuhide
Hokkaido University
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Sekiguchi T
Institute For Materials Research Tohoku Unviersity
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Sekiguchi Takashi
Nanomaterials Laboratory National Institute For Materials Science (nims)
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Sekiguchi Takashi
Department Of Chemistry And Materials Technology Kyoto Institute Of Technology
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Sekiguchi Takashi
Nanomaterials Laboratory National Institute For Materials Science
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Sekiguchi Takashi
Advanced Nano-characterization Center National Institute For Materials Science
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Sekiguchi Takashi
Institute For Materials Research Tohoku University
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Yamauchi Hiromi
National Institute Of Advanced Industrial Science And Technology (aist)
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Ogura Mutsuo
National Institute Of Advanced Industrial Science And Technology (aist)
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Yamauchi Hiromi
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba 305-8568, Japan
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Yamauchi Hiromi
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Umezono, Tsukuba 305-8568, Japan
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Tsuji Yasuhide
Hokkaido University, Kita 13, Nishi 8, Kita-ku, Sapporo 060-8628, Japan
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Ogura Mutsuo
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba 305-8568, Japan
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Ogura Mutsuo
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Umezono, Tsukuba 305-8568, Japan
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Takasuka Yasuyuki
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba 305-8568, Japan
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Sugaya Takeyoshi
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan
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Nakagawa Tadashi
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan
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Tanuma Yasuhiko
Shibaura Institute of Technology, 3-9-14 Shibaura, Minato-ku, Tokyo 108, Japan
著作論文
- Effects of As_2 Flux and Atomic Hydrogen Irradiation for Growth of InGaAs Quantum Wires by Molecular Beam Epitaxy
- Effects of As_2 Flux and Atomic Hydrogen Irradiation for Growth of InGaAs Quantum Wires by Molecular Beam Epitaxy
- Difference in Diffusion Length of Ga Atoms under As_2 and As_4 Flux in Molecular Beam Epitaxy
- InGaAs/AlGaAs Quantum Wire DFB Buried HeteroStructure Laser Diode by One-Time Selective MOCVD on Ridge Substrate
- InGaAs/AlGaAs quantum wire distributed feedback buried hetero-structure laser diode by one time selective metalorganic chemical vapor deposition on ridge substrate
- AlGaAs/InGaAs DFB Laser by One-Time Selective MOCVD Growth on a Grating Substrate
- AlGaAs/InGaAs DFB Laser by One-Time Selective MOCVD Growth on a Grating Substrate
- InGaAs/AlGaAs Quantum Wire DFB Buried HeteroStructure Laser Diode by One-Time Selective MOCVD on Ridge Substrate
- Difference in Diffusion Length of Ga Atoms under As2 and As4 Flux in Molecular Beam Epitaxy